EEWORLDEEWORLDEEWORLD

Part Number

Search

PD57018STR-E

Description
RF MOSFET Transistors POWER R.F.
CategoryDiscrete semiconductor    The transistor   
File Size918KB,25 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

PD57018STR-E Online Shopping

Suppliers Part Number Price MOQ In stock  
PD57018STR-E - - View Buy Now

PD57018STR-E Overview

RF MOSFET Transistors POWER R.F.

PD57018STR-E Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSOT
package instructionROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts10
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time25 weeks
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)2.5 A
Maximum drain current (ID)2.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature165 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)31.7 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD57018-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
P
OUT
= 18 W with 16.5dB gain@945 MHz/28 V
New RF plastic package
PowerSO-10RF
(formed lead)
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. The device boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. Device’s
superior linearity performance makes it an ideal
solution for base station applications. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performance and ease of assembly. Mounting
recommendations are available in www.st.com/rf/
(look for application note AN1294).
PowerSO-10RF
(straight lead)
Figure 1.
Pin connection
Source
Gate
Drain
Table 1.
Device summary
Order code
PD57018-E
PD57018S-E
PD57018TR-E
PD57018STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
December 2010
Doc ID 12214 Rev 5
1/25
www.st.com
25

PD57018STR-E Related Products

PD57018STR-E PD57018S-E PD57018TR-E PD57018-E
Description RF MOSFET Transistors POWER R.F. MOSFET 8 BITS MICROCONTR RF MOSFET Transistors POWER R.F. RF MOSFET Transistors POWER RF Transistor
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code SOT SOT SOT SOT
package instruction ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts 10 10 10 10
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Factory Lead Time 25 weeks 25 weeks 25 weeks 25 weeks
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V 65 V 65 V
Maximum drain current (Abs) (ID) 2.5 A 2.5 A 2.5 A 2.5 A
Maximum drain current (ID) 2.5 A 2.5 A 2.5 A 2.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-G2 R-PDSO-G2
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 165 °C 165 °C 165 °C 165 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 250 250 250 250
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 31.7 W 31.7 W 31.7 W 31.7 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN Matte Tin (Sn) - annealed
Terminal form FLAT FLAT GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches - 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2600  2554  2315  253  1457  53  52  47  6  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号