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BSO303P

Description
MOSFET P-Ch -30V -8.2A DSO-8
CategoryDiscrete semiconductor    The transistor   
File Size439KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSO303P Overview

MOSFET P-Ch -30V -8.2A DSO-8

BSO303P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeSOT
package instructionSO-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)97 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)8.2 A
Maximum drain current (ID)8.2 A
Maximum drain-source on-resistance0.021 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)32.4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSO303P H
OptiMOS
®
-P Small-Signal-Transistor
Features
• Dual P-Channel in SO8
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Halogen-free according to IEC61249-2-21
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
V
GS
=-10V
V
GS
=-4.5V
I
D
-30
21
32
-8.2
A
V
mW
SO 8
Type
BSO303P H
Package
PG-DSO- 8
Marking
303P
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
10 secs
Continuous drain current
1)
I
D
T
C
=25 °C
T
C
=70 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 HBM
T
A
=25 °C
T
C
=25 °C
I
D
=-8.2 A,
R
GS
=25
W
-8,2
-6,6
-32,8
97
±20
2
-55 ... 150
1B (500V - 1kV)
260 °C
55/150/56
mJ
V
W
°C
steady state
-7,0
-5,8
A
Unit
Rev. 1.3
page 1
2010-02-10
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