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MJD127-TP

Description
Bipolar Transistors - BJT TRANS PNP 100V 8A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size362KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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MJD127-TP Overview

Bipolar Transistors - BJT TRANS PNP 100V 8A DPAK

MJD127-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionDPAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MJD127
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High DC Current Gain
Electrically similar to popular TIP 127
Built-in a damper diode at E-C
o
Maximum Thermal Resistance:
83.3
C/W Junction to
Ambient
Silicon
PNP epitaxial planer
Transistors
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction Temperature
Storage Temperature
O
DPAK
J
Rating
-100
-100
-5
-8
1.5
150
-55 to +150
Unit
V
V
V
A
W
H
C
1
O
2
I
3
M
F
E
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-30mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-1mAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=-1mAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-100Vdc, I
E
=0)
Collector emitter cutoff Current
(V
CB
=-100Vdc, V
BE(off)
=1.5V)
Emitter Cutoff Current
(V
EB
=-5Vdc, I
C
=0)
DC Current Gain
(I
C
=-4Adc, V
CE
=-4Vdc)
(I
C
=-8Adc, V
CE
=-4Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=-4Adc, I
B
=-16mAdc) (note 1)
(I
C
=-8Adc, I
B
=-80mAdc)(note 1)
V
BE(sat)
V
BE
C
ob
Base-Emitter Saturation Voltage
(I
C
=-8Adc, I
B
=-80mAdc) (note 1)
Base-Emitter Saturation Voltage
(I
C
=-4Adc, V
CE
=-4Vdc ) (note 1)
Output Capacitance
(V
CB
=-10Vdc, f=0.1MHz, I
E
=0)
Min
-100
-100
-5
---
---
---
1000
100
Typ
---
---
---
---
---
---
---
Max
---
---
---
-10
-10
-2
12000
Units
Vdc
Vdc
Vdc
K
V
G
Q
nAdc
nAdc
nAdc
L
B
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
A
D
BASE
COLLECTOR
EMITTER
---
---
---
---
---
----
----
----
----
---
-2
-4
-4.5
-2.8
300
Vdc
Vdc
Vdc
Vdc
pF
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
V
Note:
_
_
1.Pulse
Test: Pulse Width<380µs, Duty Cycle<2%
INCHES
MIN
MAX
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.023
0.256
0.264
0.201
0.215
0.190
0.236
0.244
0.086
0.094
0.386
0.409
0.114
0.055
0.067
0.063
0.043
0.051
0.000
0.012
0.211
MM
MIN
2.20
0.00
0.66
0.46
6.50
5.10
4.83
6.00
2.18
9.80
6.20
2.39
10.40
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
2.90
1.40
1.60
1.10
0.00
1.30
0.30
1.70
5.35
www.mccsemi.com
Revision:
B
1 of 3
2013/01/01

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