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NP3100SCT3G

Description
Sidacs 100A 310V TSPD SMB
CategoryAnalog mixed-signal IC    Trigger device   
File Size112KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NP3100SCT3G Overview

Sidacs 100A 310V TSPD SMB

NP3100SCT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeDO-214
package instructionSMALL OUTLINE, R-PDSO-C2
Contacts2
Manufacturer packaging codeCASE 403C-01
Reach Compliance Codenot_compliant
Other featuresUL RECOGNIZED
Maximum breakover voltage350 V
ConfigurationSINGLE
Maximum off-state DC voltage275 V
Maximum holding current150 mA
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
Trigger device typeSILICON SURGE PROTECTOR
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR−1089−CORE, IEC 61000−4−5, ITU
K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950,
UL 1950.
ELECTRICAL PARAMETERS
V
DRM
Device
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V
58
65
75
90
120
140
170
180
190
220
275
320
V
(BO)
V
77
88
98
130
160
180
220
240
260
300
350
400
V
T
V
4
4
4
4
4
4
4
4
4
4
4
4
I
DRM
mA
5
5
5
5
5
5
5
5
5
5
5
5
I
(BO)
mA
800
800
800
800
800
800
800
800
800
800
800
800
I
T
A
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
150
SMB
JEDEC DO−214AA
CASE 403C
http://onsemi.com
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64
350 VOLTS
MT1
MT2
MARKING DIAGRAM
AYWW
xxxxG
G
xxxx
= Specific Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
Waveform
Specification
GR−1089−CORE
TIA−968−A
GR−1089−CORE
TIA−968−A
ITU−T K.20/21
GR−1089−CORE
*
Voltage
ms
2x10
10x160
10x360
10x560
10x700
10x1000
Current
ms
2x10
10x160
10x360
10x560
5x310
10x1000
x = series ratings
A
150
90
75
50
75
50
B
250
150
125
100
100
80
C
500
200
175
150
200
100
Unit
A(pk)
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Recognized Components
©
Semiconductor Components Industries, LLC, 2008
May, 2008
Rev. 5
1
Publication Order Number:
NP0640S/D

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