Preliminary Technical Information
XPT
TM
650V IGBT
GenX3
TM
w/ Sonic
Diode
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXYT30N65C3H1HV
IXYH30N65C3H1
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
TO-268HV
650V
30A
2.7V
24ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
I
A
E
AS
SSOA
(RBSOA)
t
sc
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
Maximum Ratings
650
650
±20
±30
60
30
29
118
10
300
I
CM
= 60
V
CE
V
CES
8
270
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
A
mJ
A
μs
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Advantages
G
E
C (Tab)
TO-247 AD
T
C
= 25°C
T
C
= 25°C
V
GE
= 15V, T
VJ
= 150°C, R
G
= 10
Clamped Inductive Load
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C
R
G
= 82, Non Repetitive
T
C
= 25°C
G
C
E
Tab
G = Gate
E = Emitter
C
= Collector
Tab = Collector
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
300
260
1.13/10
4
6
Optimized for 20-60kHz Switching
Square RBSOA
High Voltage
Avalanche Rated
Short Circuit Capability
Anti-Parallel Sonic Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 250A, V
CE
= V
GE
T
J
= 150C
V
CE
= 0V, V
GE
=
20V
I
C
= 30A, V
GE
= 15V, Note 1
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
650
3.5
6.0
V
V
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
V
CE
= V
CES
, V
GE
= 0V
50
A
4 mA
100
2.35
2.58
2.70
nA
V
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
DS100545A(7/14)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYT30N65C3H1HV
IXYH30N65C3H1
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
11
19
1225
173
28
44
7
24
21
42
1.00
75
24
0.27
19
40
1.50
90
30
0.41
0.21
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.55 °C/W
°C/W
TO-247 (IXYH) Outline
Reverse Sonic Diode (FRD)
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
V
F
I
RM
t
rr
R
thJC
I
F
= 30A, V
GE
= 0V, Note 1
I
F
= 30A, V
GE
= 0V,
-di
F
/dt = 500A/μs, V
R
= 400V
Characteristic Values
Min. Typ.
Max.
2.5
T
J
= 150°C
T
J
= 150°C
T
J
= 150°C
2.15
25
120
V
V
A
ns
0.80 °C/W
1 - Gate
2,4 - Collector
3 - Emitter
1 - Gate
2 - Emitter
3 - Collector
TO-268HV Outline
g
fs
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= 30A, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
Inductive load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 10
Note 2
Inductive load, T
J
= 150°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 10
Note 2
TO-247
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYT30N65C3H1HV
IXYH30N65C3H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GE
= 15V
13V
12V
11V
40
140
120
100
V
GE
= 15V
14V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
50
I
C
- Amperes
I
C
-
Amperes
13V
12V
11V
10V
9V
8V
30
10V
80
60
40
20
9V
10
8V
7V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
20
0
0
5
10
15
20
25
0
30
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
60
V
GE
= 15V
13V
12V
11V
1.8
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
50
1.6
V
CE(sat)
- Normalized
40
1.4
I
C
=60A
I
C
- Amperes
10V
30
9V
20
8V
10
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
6V
5
1.2
I
C
= 30A
1.0
0.8
I
C
= 15A
0.6
-50
-25
0
25
50
75
100
125
150
175
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
7
T
J
= 25ºC
50
60
Fig. 6. Input Admittance
6
40
5
I
C
= 60A
4
3
I
C
-
Amperes
V
CE
- Volts
30
T
J
= 150ºC
25ºC
- 40ºC
20
30A
10
15A
8
9
10
11
12
13
14
15
2
1
0
5
6
7
8
9
10
11
V
GE
- Volts
V
GE
- Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXYT30N65C3H1HV
IXYH30N65C3H1
Fig. 7. Transconductance
28
24
V
CE
= 10V
T
J
= - 40ºC
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
55
60
0
5
10
15
20
25
30
35
40
45
V
CE
= 325V
I
C
= 30A
I
G
= 10mA
Fig. 8. Gate Charge
20
25ºC
g
f s
-
Siemens
16
12
8
4
0
I
C
- Amperes
V
GE
- Volts
150ºC
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
70
Fig. 10. Reverse-Bias Safe Operating Area
f
= 1 MHz
60
Capacitance - PicoFarads
50
1,000
I
C
- Amperes
Cies
40
30
20
T
J
= 150ºC
10
R
G
= 10
Ω
dv / dt < 10V / ns
100
Coes
Cres
10
0
5
10
15
20
25
30
35
40
0
100
200
300
400
500
600
700
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1
Z
(th)JC
- ºC / W
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT30N65C3H1HV
IXYH30N65C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2.4
E
off
2.0
V
CE
= 400V
E
on
-
12
1.2
E
off
10
1.0
V
CE
= 400V
E
on
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
6
---
----
5
T
J
= 150ºC , V
GE
= 15V
R
G
= 10
Ω
,
V
GE
= 15V
E
off
- MilliJoules
E
off
- MilliJoules
1.6
I
C
= 60A
8
0.8
4
E
on
- MilliJoules
E
on
- MilliJoules
1.2
6
0.6
T
J
= 150ºC
3
0.8
4
0.4
2
0.4
I
C
= 30A
0.0
10
20
30
40
50
60
70
80
2
0.2
T
J
= 25ºC
1
0
0.0
15
20
25
30
35
40
45
50
55
60
0
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
1.2
1.0
E
off
V
CE
= 400V
5
I
C
= 60A
4
3
2
1
I
C
= 30A
0.0
25
50
75
100
125
0
150
E
on
7
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
350
----
6
70
t
fi
V
CE
= 400V
t
d(off)
- - - -
300
R
G
= 10
Ω
,
V
GE
= 15V
T
J
= 150ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
0.8
0.6
0.4
0.2
t
f i
- Nanoseconds
E
off
- MilliJoules
60
250
E
on
- MilliJoules
50
I
C
= 60A
40
I
C
= 30A
200
150
30
100
20
10
20
30
40
50
60
70
80
50
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
70
60
50
160
80
70
60
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
100
t
fi
V
CE
= 400V
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
140
120
100
80
T
J
= 25ºC
60
40
20
t
fi
V
CE
= 400V
t
d(off)
- - - -
95
90
R
G
= 10
Ω
, V
GE
= 15V
t
f i
- Nanoseconds
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
50
40
30
20
10
0
25
50
75
100
125
I
C
= 30A
I
C
= 60A
85
80
75
70
65
60
150
40
30
20
10
0
15
20
25
30
35
T
J
= 150ºC
40
45
50
55
60
I
C
- Amperes
T
J
- Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
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