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BAS19LT3G

Description
Switching Diode, High Voltage 120 V, SOT-23 (TO-236) 3 LEAD, 10000-REEL
CategoryDiscrete semiconductor    diode   
File Size69KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance  
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BAS19LT3G Overview

Switching Diode, High Voltage 120 V, SOT-23 (TO-236) 3 LEAD, 10000-REEL

BAS19LT3G Parametric

Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Lead free
Objectid2054289120
Parts packaging codeSOT-23 (TO-236) 3 LEAD
package instructionTO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
Factory Lead Time4 weeks
Samacsys DescriptionON Semiconductor Switching Diode, 200mA 120V, 3-Pin SOT-23 BAS19LT3G
Samacsys Manufactureronsemi
Samacsys Modified On2023-03-07 16:10:32
YTEOL6.15
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.625 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage120 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
BAS19L, BAS20L, BAS21L,
BAS21DW5
High Voltage
Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Continuous Forward Current
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Repetitive Peak Forward Current
(Pulse Train: T
ON
= 1 s, T
OFF
= 0.5 s)
Junction and Storage Temperature
Range
Power Dissipation (Note 1)
Electrostatic Discharge
V
RRM
120
200
250
I
F
I
FSM
I
FRM
T
J
, T
stg
P
D
ESD
200
2
0.6
−55 to +150
385
HM < 500
MM < 400
mAdc
A
A
°C
mW
V
V
1
2
Symbol
V
R
120
200
250
Vdc
Value
Unit
Vdc
www.onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
CATHODE
SC−88A
5
CATHODE
4
CATHODE
1
ANODE
3
ANODE
1
ANODE
MARKING DIAGRAMS
3
3
Jx M
G
G
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
5
3
1
SC−88A (SOT−353)
CASE 419A
4
Jx M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
1
2
3
x
= P, R, or S
P
= BAS19L
R
= BAS20L
S
= BAS21L or BAS21DW5
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 1999
1
November, 2016 − Rev. 18
Publication Order Number:
BAS19LT1/D

BAS19LT3G Related Products

BAS19LT3G SBAS21LT3G NSVBAS20LT3G SBAS21DW5T3G
Description Switching Diode, High Voltage 120 V, SOT-23 (TO-236) 3 LEAD, 10000-REEL Diodes - General Purpose, Power, Switching SS SWCH DIO SPCL Diodes - General Purpose, Power, Switching SS SWCH DIO 200V Diodes - General Purpose, Power, Switching SS SC88 DL HIVLT SWCH DIO
Brand Name onsemi ON Semiconductor ON Semiconductor -
Is it lead-free? Lead free Lead free Lead free -
package instruction TO-236, 3 PIN TO-236, 3 PIN R-PDSO-G3 -
Manufacturer packaging code 318-08 318-08 318-08 -
Reach Compliance Code compliant compliant compliant -
ECCN code EAR99 EAR99 EAR99 -
Factory Lead Time 4 weeks 1 week 4 weeks -
Configuration SINGLE SINGLE SINGLE -
Diode component materials SILICON SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
JEDEC-95 code TO-236AB TO-236AB TO-236AB -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
JESD-609 code e3 e3 e3 -
Humidity sensitivity level 1 1 1 -
Number of components 1 1 1 -
Number of terminals 3 3 3 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Minimum operating temperature -55 °C -55 °C -55 °C -
Maximum output current 0.2 A 0.2 A 0.2 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED -
Maximum power dissipation 0.225 W 0.225 W 0.225 W -
Maximum repetitive peak reverse voltage 120 V 250 V 200 V -
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs -
surface mount YES YES YES -
Terminal surface Matte Tin (Sn) - annealed Tin (Sn) Tin (Sn) -
Terminal form GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL -
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED -

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