BGE788
750 MHz, 34 dB gain push-pull amplifier
Rev. 5 — 16 September 2011
Product data sheet
1. Product profile
1.1 General description
Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply
voltage of 24 V (DC). The module consists of two cascaded stages both in cascode
configuration.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1
2
3
5
7
8
9
1.2 Features and benefits
Excellent linearity
Extremely low noise
High gain
Excellent return loss properties
1.3 Applications
Single module line extender in CATV systems operating in the 40 MHz to 750 MHz
frequency range.
1.4 Quick reference data
Table 1.
Symbol
G
p
I
tot
[1]
Quick reference data
Parameter
power gain
total current consumption (DC)
Conditions
f = 50 MHz
f = 750 MHz
V
B
= 24 V
[1]
Min
33.5
34
290
Typ
-
-
-
Max
34.5
-
320
Unit
dB
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
NXP Semiconductors
BGE788
750 MHz, 34 dB gain push-pull amplifier
2. Pinning information
Table 2.
Pin
1
2
3
5
7
8
9
Pinning
Description
input
common
common
+V
B
common
common
output
1 3 5 7 9
1
5
9
Simplified outline
Symbol
2 3 7 8
sym095
3. Ordering information
Table 3.
Ordering information
Package
Name
BGE788
-
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
B
V
i
T
stg
T
mb
Parameter
supply voltage
RF input voltage
storage temperature
mounting base temperature
Conditions
Min
-
-
40
20
Max
25
55
+100
+100
Unit
V
dBmV
C
C
BGE788
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 16 September 2011
2 of 8
NXP Semiconductors
BGE788
750 MHz, 34 dB gain push-pull amplifier
5. Characteristics
Table 5.
Characteristics
Bandwidth 40 MHz to 740 MHz; V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
; unless otherwise
specified.
Symbol
G
p
SL
FL
Parameter
power gain
slope cable
equivalent
flatness of
frequency
response
input return
losses
Conditions
f = 50 MHz
f = 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
Min
33.5
34
0.5
-
Typ
-
-
-
-
Max Unit
34.5 dB
-
2.5
dB
dB
0.5
dB
s
11
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
225
49
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
s
22
output return
losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
s21
CTB
phase response
composite triple
beat
f = 50 MHz
110 channels flat;
V
o
= 44 dBmV; measured at
745.25 MHz
X
mod
cross modulation 110 channels flat;
V
o
= 44 dBmV; measured at
55.25 MHz
composite
second order
distortion
second order
distortion
output voltage
noise figure
positive match
total current
consumption
(DC)
d
im
=
60
dB
f = 750 MHz
f = 40 MHz to 2 GHz
[3]
-
-
51
dB
CSO
110 channels flat;
V
o
= 44 dBmV; measured at
746.5 MHz
[1]
-
-
52
dB
d
2
V
o
F
PM
I
tot
-
58
-
-
290
-
-
-
-
-
64
-
7
3
320
dB
dBmV
dB
dB
mA
[2]
[1]
[2]
[3]
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
Measured according to DIN45004B; f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
6 dB;
f
r
= 749.25 MHz; V
r
= V
o
6 dB; measured at f
p
+ f
q
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGE788
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 16 September 2011
3 of 8
NXP Semiconductors
BGE788
750 MHz, 34 dB gain push-pull amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
D
E
Z
p
SOT115J
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
x
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.5
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
Q
max.
q
q1
q2
S
U1
U2
W
w
x
y
0.1
Z
max.
3.8
mm 20.8
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-02-04
10-06-18
Fig 1.
BGE788
Package outline SOT115J
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 16 September 2011
4 of 8
NXP Semiconductors
BGE788
750 MHz, 34 dB gain push-pull amplifier
7. Revision history
Table 6.
Revision history
Release date
20110916
Data sheet status
Product data sheet
Change notice
-
Supersedes
BGE788 v.4
Document ID
BGE788 v.5
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
Product data sheet
Product specification
Product specification
Preliminary specification
-
-
-
-
BGE788 v.3
BGE788 v.2
BGE788_N v.1
-
BGE788 v.4
(9397 750 14433)
BGE788 v.3
(9397 750 08812)
BGE788 v.2
(9397 750 02981)
BGE788_N v.1
(9397 750 02294)
20050330
20011115
19980108
19970505
BGE788
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 16 September 2011
5 of 8
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