ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
(BR)DSS
= 30V; R
DS(ON)
= 0.035 ; I
D
= 6.4A
P-Channel V
(BR)DSS
= -30V; R
DS(ON)
= 0.048 ; I
D
= -5.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SO8
APPLICATIONS
•
Motor Drive
•
LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
ZXMC3A16DN8TA
ZXMC3A16DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMC
3A16
Top view
ISSUE 1 - OCTOBER 2005
1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at TA=25°C
(a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C
(a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C
(b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
N-Channel P-Channel
30
20
6.4
5.1
4.9
30
3.4
30
1.25
10
1.8
14
2.1
17
-55 to +150
-30
20
-5.4
-4.3
-4.1
-25
-3.2
-25
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(d)
Junction to Ambient
(b)(e)
Junction to Ambient
(b)(d)
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
100
70
60
UNIT
°C/W
°C/W
°C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ISSUE 1 - OCTOBER 2005
2
ZXMC3A16DN8
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
ZXMC3A16DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1
0.035
0.050
13.5
S
30
0.5
100
V
µA
nA
V
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=7.4A
V
DS
=15V,I
D
=9A
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
g
fs
C
iss
C
oss
C
rss
796
137
84
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
3.0
6.4
21.6
9.4
9.2
17.5
2.3
3.1
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
V
DD
=15V, I
D
=3.5A
R
G
=6.0Ω, V
GS
=10V
V
SD
t
rr
Q
rr
0.85
17.8
11.6
0.95
V
ns
nC
T
J
=25°C, I
S
=5.1A,
V
GS
=0V
T
J
=25°C, I
F
=3.5A,
di/dt= 100A/µs
ISSUE 1 - OCTOBER 2005
4
ZXMC3A16DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
-30
-1.0
100
1.0
0.048
0.070
9.2
V
A
nA
V
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.4A
S
V
DS
=-15V,I
D
=-4.2A
C
iss
C
oss
C
rss
970
166
116
pF
pF
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
3.8
6.1
35
19
12.9
24.9
2.67
3.86
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-4.2A
V
DS
=-15V,V
GS
=-5V,
I
D
=-4.2A
V
DD
=-15V, I
D
=-1A
R
G
=6.0Ω, V
GS
=-10V
V
SD
t
rr
Q
rr
-0.85
21.2
18.7
-0.95
V
ns
nC
T
J
=25°C, I
S
=-3.6A,
V
GS
=0V
T
J
=25°C, I
F
=-2A,
di/dt= 100A/µs
ISSUE 1 - OCTOBER 2005
5
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