The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
1
SiE820DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
Maximum Junction-to-Ambient
a, b
a
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)
a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 18 A
V
GS
=
2.5 V, I
D
= 13.4 A
V
DS
= 10 V, I
D
= 18 A
0.6
20
20
- 4.8
1.4
V
mV/°C
2
± 100
1
10
0.0035
0.0064
V
nA
µA
A
0.0029
0.0053
106
4300
950
450
95
43
11.5
10
1.0
35
115
105
30
15
35
55
10
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
25
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 10 V, R
L
= 1.0
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
pF
143
65
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
R
g
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Drain-Source Body Diode Characteristics
I
S
Continuous Source-Drain Diode Current
a
I
SM
Pulse Diode Forward Current
V
SD
Body Diode Voltage
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
t
a
Reverse Recovery Fall Time
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
nC
Ω
V
DD
= 10 V, R
L
= 1.0
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
1.5
55
175
160
45
25
55
85
15
50
80
1.2
150
150
ns
T
C
= 25 °C
I
S
= 10 A
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
0.8
101
100
75
25
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
80
V
GS
= 5
V
thru 2.5
V
16
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
20
40
8
T
C
= 125 °C
20
4
V
GS
= 2
V
0
0.0
0
1.0
T
C
= 25 °C
T
C
= - 55 °C
1.5
2.0
1.4
1.8
2.2
2.6
3.0
0.5
1.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.008
7200
Transfer Characteristics
R
DS(on)
- On-Resistance (m )
0.007
V
GS
= 2.5
V
C - Capacitance (pF)
6000
0.006
4800
C
oss
0.005
3600
0.004
V
GS
= 4.5
V
0.003
2400
C
iss
1200
C
rss
0
5
10
15
20
0.002
0
20
40
I
D
- Drain Current (A)
60
80
0
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
8
V
DS
= 16
V
6
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 10
V
1.4
1.6
I
D
= 18 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
= 4.5
V
1.2
V
GS
= 2.5
V
4
1.0
2
0.8
0
0
20
40
60
80
100
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
3
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-Source On-Resistance ( )
0.008
I
D
= 18 A
0.007
I
S
- Source Current (A)
0.006
T
J
= 150 °C
10
T
J
= 25 °C
0.005
T
A
= 125 °C
0.004
0.003
T
A
= 25 °C
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Source-to-Drain
Voltage
(V)
0.002
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.8
50
On-Resistance vs. Gate-to-Source Voltage
1.6
40
I
D
= 250
µA
Po
w
er (
W
)
30
1.4
V
GS(th)
(V)
1.2
20
1.0
10
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
1 ms
10
I
D
- Drain Current (A)
10 ms
100 ms
1
1s
T
A
= 25 °C
Single Pulse
0.1
BVDSS
Limited
0.01
0.01
*
V
GS
0.1
1
10
100
10 s
DC
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
160
140
Power Dissipation (W)
120
I
D
- Drain Current (A)
100
80
60
40
20
0
0
25
50
75
100
125
150
20
Package Limited
120
100
80
60
40
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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