BYS11-90-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variation
1.5 A
90 V
40 A
0.75 V
150 °C
DO-214AC (SMA)
Single die
For use in high frequency inverters, switching power
supplies, freewheeling diodes, oring diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Junction and storage temperature range
8.3 ms
10 ms
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
BYS11-90
BYS109
90
1.5
40
30
10 000
-55 to +150
V
A
A
V/μs
°C
UNIT
Reivision: 09-Dec-13
Document Number: 89409
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYS11-90-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum DC reverse current
TEST CONDITIONS
1.0 A
V
RRM
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
V
F (1)
I
R (1)
BYS11-90
750
100
1
UNIT
mV
μA
mA
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
SYMBOL
R
JL
R
JA
(1)
R
JA
(2)
BYS11-90
25
150
125
100
UNIT
°C/W
°C/W
R
JA
(3)
Notes
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al O ), 50 mm
2
35 μm Cu
2 3
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYS11-90-M3/TR
BYS11-90-M3/TR3
UNIT WEIGHT (g)
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
BASE QUANTITY
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
T
J
= 150 °C
2.0
V
R
= V
RRM
, Half Sine-Wave, R
thJA
= 25 K/W
Average Forward Current (A)
1.6
Forward Current (A)
1
1.2
0.1
T
J
= 25 °C
0.01
0.8
0.4
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
0
40
80
120
160
200
Forward Voltage (V)
Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Reivision: 09-Dec-13
Document Number: 89409
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYS11-90-M3
www.vishay.com
Vishay General Semiconductor
2.0
2.0
Max. Reverse Power Dissipation (W)
V
R
= 0 V, Half Sine-Wave
R
thJA
= 25 K/W
1.6
Average Forward Current (A)
1.6
R
thJA
= 25 K/W
1.2
1.2
100 K/W
0.8
125 K/W
0.4
100 K/W
0.8
0.4
V
R
= V
RRM
0
0
40
80
120
100
200
150 K/W
0
0
40
80
120
160
200
Ambient Temperature (°C)
Junction Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1000
V
R
= V
RRM
100
180
160
f = 1 MHz
Diode Capacitance (pF)
0
40
80
120
160
200
Reverse Current (mA)
140
120
100
80
60
40
20
10
1
0.1
0
0.1
1
10
100
Junction Temperature (°C)
Reverse Voltage (V)
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Reivision: 09-Dec-13
Document Number: 89409
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Revision: 08-Feb-17
1
Document Number: 91000
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