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PSMN1R9-40PLQ

Description
MOSFET N-channel 40 V 1.7 mOhm MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size727KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MOSFET N-channel 40 V 1.7 mOhm MOSFET

PSMN1R9-40PLQ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current150 A
Rds On - Drain-Source Resistance1.4 mOhms
Vgs th - Gate-Source Threshold Voltage1.7 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge230 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation349 W
PackagingTube
Transistor Type1 N-Channel
Fall Time119 ns
Rise Time118 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time195 ns
Typical Turn-On Delay Time95 ns
Unit Weight0.211644 oz
PSMN1R9-40PL
1 February 2013
N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78
Product data sheet
1. General description
Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design
and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Logic level gate
3. Applications
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; V
DS
= 32 V;
Fig. 13; Fig. 14
-
-
230
40.9
-
-
nC
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
40
150
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
1.4
1.7
Dynamic characteristics
Q
G(tot)
Q
GD
E
DS(AL)S
total gate charge
gate-drain charge
Avalanche ruggedness
non-repetitive drain-
source avalanche
energy
[1]
I
D
= 150 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
-
-
801.1
mJ
Continuous current is limited by package.
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