BSO072N03S datasheet, PDF - EEWORLD Datasheet

BSO072N03S: DescriptionMOSFET N-Ch 30V 12A DSO-8; CategoryDiscrete semiconductor The transistor; File Size626KB，18 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-Ch 30V 12A DSO-8

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.0068 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	160 pF
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	3
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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