UM6K31N
Nch+Nch 60V 250mA Small Signal MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
60V
2.4Ω
±250mA
150mW
SOT-363
SC-88
UMT6
l
Features
1) Low on - resistance.
2) Small Surface Mount Package (UMT6).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
l
Inner circuit
l
Packaging specifications
Packing
l
Application
Embossed
Tape
180
8
3000
TR
K31
Value
60
±250
±1
±20
150
120
150
-55 to +150
Unit
V
mA
A
V
mW
℃
℃
Reel size (mm)
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Switching
l
Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
total
element
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
T
j
T
stg
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/10
20160711 - Rev.002
UM6K31N
l
Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
total
element
Symbol
R
thJA*2
Values
Min.
-
-
Typ.
-
-
Max.
833
1042
Unit
℃
/W
l
Electrical characteristics (T
a
= 25°C)
<Tr1 and Tr2>
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
60
-
-
-
1.0
-
-
-
-
-
250
Typ.
-
63.7
-
-
-
-2.8
1.7
2.1
2.3
3.0
-
Max.
-
-
1
±10
2.3
-
2.4
3.0
3.2
12.0
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 60V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 10V, I
D
= 250mA
Static drain - source
on - state resistance
R
DS(on)*3
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 4.0V, I
D
= 250mA
V
GS
= 2.5V, I
D
= 10mA
Forward Transfer
Admittance
|Y
fs
|
*3
V
DS
= 10V, I
D
= 250mA
Ω
mS
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160711 - Rev.002
UM6K31N
Datasheet
l
Electrical characteristics
(T
a
= 25°C) <Tr1 and Tr2>
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*3
t
r*3
t
d(off)*3
t
f*3
Conditions
Min.
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
DD
⋍
30V,V
GS
= 10V
Values
Typ.
15
4.5
2.0
3.5
5
18
28
Max.
-
-
-
-
-
Unit
-
-
-
-
-
-
-
pF
I
D
= 100mA
R
L
= 300Ω
R
G
= 10Ω
ns
-
-
l
Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
<Tr1 and Tr2>
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*3
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 250mA
-
-
-
Values
Typ.
-
-
-
Max.
0.125
1
1.2
A
V
Unit
*1 Pw
≦
10μs, Duty cycle
≦
1%
*2 EACH TERMINAL MOUNTED ON A RECOMMENDED LAND
*3 Pulsed
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/10
20160711 - Rev.002
UM6K31N
Datasheet
l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Drain Current Derating Curve
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/10
20160711 - Rev.002
UM6K31N
Datasheet
l
Electrical characteristic curves
Fig.5 Breakdown Voltage vs.
Junction Temperature
Fig.6 Typical Transfer Characteristics
Fig.7 Gate Threshold Voltage vs.
Junction Temperature
Fig.8 Forward Transfer Admittance vs.
Drain Current
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/10
20160711 - Rev.002
京公网安备 11010802033920号
EEWORLD
