TC4451/TC4452
12A High-Speed MOSFET Drivers
Features
• High Peak Output Current: 13A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2.6A (max.)
• Matched Fast Rise and Fall Times:
- 21 ns with 10,000 pF Load
- 42 ns with 22,000 pF Load
• Matched Short Propagation Delays: 44 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 140
μA
(typ.)
- With Logic ‘0’ Input – 40
μA
(typ.)
• Low Output Impedance: 0.9Ω (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429,
TC4421/TC4422 and TC4421A/TC4422A
MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
General Description
The TC4451/TC4452 are single-output MOSFET
drivers. These devices are high-current buffer/drivers
capable of driving large MOSFETs and Insulated Gate
Bipolar Transistors (IGBTs). The TC4451/TC4452 have
matched output rise and fall times, as well as matched
leading and falling-edge propagation delay times. The
TC4451/TC4452 devices also have very low cross-
conduction current, reducing the overall power
dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1.5A inductive current of either
polarity being forced back into their outputs. In addition,
all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4451/TC4452 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4451/TC4452 family of 12A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
Applications
•
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
LF Initiator
©
2006 Microchip Technology Inc.
DS21987A-page 1
TC4451/TC4452
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage .................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
> V
DD
)................................... 50 mA
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
I
S
V
DD
—
—
4.5
140
40
—
200
100
18.0
μA
μA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
30
32
44
44
40
40
52
52
ns
ns
ns
ns
Figure 4-1,
C
L
= 15,000 pF
Figure 4-1,
C
L
= 15,000 pF
Figure 4-1,
C
L
= 15,000 pF
Figure 4-1,
C
L
= 15,000 pF
V
OH
V
OL
R
OH
R
OL
I
PK
I
DC
I
REV
V
DD
– 0.025
—
—
—
—
2.6
—
—
—
1.0
0.9
13
—
>1.5
—
0.025
1.5
1.5
—
—
—
V
V
Ω
Ω
A
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
10V
≤
V
DD
≤
18V
(Note 2, Note 3)
Duty cycle
≤
2%, t
≤
300
μs
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
–5
1.5
1.3
—
—
—
0.8
+10
V
DD
+ 0.3
V
V
μA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
3:
Valid for AT and MF packages only. T
A
= +25°C.
©
2006 Microchip Technology Inc.
DS21987A-page 3
TC4451/TC4452
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
I
S
V
DD
—
—
4.5
Switching times ensured by design.
200
50
—
400
150
18.0
μA
μA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
35
38
55
55
60
60
65
65
ns
ns
ns
ns
Figure 4-1,
C
L
= 15,000 pF
Figure 4-1,
C
L
= 15,000 pF
Figure 4-1,
C
L
= 15,000 pF
Figure 4-1,
C
L
= 15,000 pF
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
—
—
—
0.025
2.2
2.0
V
V
Ω
Ω
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
–10
—
—
—
—
0.8
+10
V
V
μA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
18V.
Parameters
Temperature Ranges
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
71
33.2
125
155
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Without heat sink
Typical 4-layer board with
vias to ground plane
T
A
T
J
T
A
–40
—
–65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS21987A-page 4
©
2006 Microchip Technology Inc.
京公网安备 11010802033920号
EEWORLD
