Agilent ATF-53189 Enhancement
Mode
[1]
Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Features
• Single voltage operation
• High Linearity and Gain
• Low Noise Figure
• Excellent uniformity in product
specifications
• SOT 89 standard package
• Point MTTF > 300 years
[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option
available
Specifications
2 GHz, 4.0V, 135 mA (Typ.)
G
S
Top View
S
D
Description
Agilent Technologies’s
ATF-53189 is a single-voltage
high linearity, low noise
E-pHEMT FET packaged in a
low cost surface mount SOT89
package. The device is ideal as a
high-linearity, low noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
ATF-53189 is ideally suited for
Cellular/PCS and WCDMA
wireless infrastructure, WLAN,
WLL and MMDS application, and
general purpose discrete
E-pHEMT amplifiers which
require medium power and high
linearity. All devices are 100% RF
and DC tested.
Pin Connections and
Package Marking
S
3GX
• 40.0 dBm Output IP3
• 23.0 dBm Output Power at 1dB gain
compression
• 0.85 dB Noise Figure
• 15.5 dB Gain
• 46% PAE at P1dB
D
S
G
Bottom View
• LFOM
[3]
12.7 dB
Applications
• Front-end LNA Q1 and Q2, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
Notes:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3
divided by DC bias power.
Notes:
Package marking provides orientation and
identification:
“3G” = Device Code
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
ATF-53189 Absolute Maximum Ratings
[1]
Symbol
V
ds
V
gs
V
gd
I
ds
I
gs
P
diss
P
in max.
T
ch
T
stg
Parameter
Drain–Source Voltage
[2]
Gate–Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Gate Current
Total Power Dissipation
[3]
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mA
W
dBm
°C
°C
Absolute
Maximum
7
-5 to 1.0
-5 to 1.0
300
20
1.0
+24
150
-65 to 150
Thermal Resistance
[2,4]
θ
ch-b
= 70°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature T
B
is 25°C.
Derate 14.30 mW/°C for T
B
> 80°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
ATF-53189 Electrical Specifications
T
A
= 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified.
Symbol
Vgs
Vth
Ids
Gm
Parameters and Test Conditions
Operational Gate Voltage
Threshold Voltage
Drain to Source Current
Transconductance
Vds = 4.0V, Ids = 135 mA
Vds = 4.0V, Ids = 8 mA
Vds = 4.0V, Vgs = 0V
Vds = 4.0V, Gm =
∆Ids/∆Vgs;
∆Vgs
= Vgs1 – Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
Vds = 0V, Vgs = -4V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Offset BW = 5 MHz
Offset BW = 10 MHz
Units
V
V
µA
mmho
Min.
—
—
—
—
Typ.
0.65
0.30
3.70
650
Max.
—
—
—
—
Igss
NF
G
OIP3
P1dB
PAE
ACLR
Gate Leakage Current
Noise Figure
Gain
[1]
Output 3
rd
Order Intercept Point
[1]
Output 1dB Compressed
[1]
Power Added Efficiency
Adjacent Channel Leakage
Power Ratio
[1,2]
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
dBc
dBc
-10.0
—
—
14.0
—
36.0
—
—
—
—
—
—
—
-0.34
0.85
0.80
15.5
17.2
40.0
42.0
23.0
21.7
46.0
33.8
-54.0
-64.0
—
—
—
17.0
—
—
—
—
—
—
—
—
—
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -8 dBm
- Channel Integrate Bandwidth = 3.84 MHz
2
Input
Input Matching Circuit
Γ_mag=0.74
Γ_ang=-112.4°
DUT
Output Matching Circuit
Γ_mag=0.40
Γ_ang=-120.0°
Output
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts
[1,2]
150
150
Stdev=0.86
120
Stdev=0.08
120
FREQUENCY
FREQUENCY
90
90
–3 Std
60
+3 Std
–3 Std
60
+3 Std
30
30
0
36 37 38 39 40 41 42 43 44 45
OIP3 (dBm)
0
.5
.6
.7
.8
.9
1
1.1
NF (dBm)
Figure 2. OIP3 @ 2 GHz, 4V, 135 mA.
LSL = 36 dBm, Nominal = 40 dBm.
150
Figure 3. NF @ 2 GHz, 4V, 135 mA.
USL = 1.30 dBm, Nominal = 0.84 dBm.
150
Stdev=0.22
120
FREQUENCY
FREQUENCY
Stdev=1.14
120
90
90
–3 Std
60
+3 Std
–3 Std
60
+3 Std
30
30
0
14.5
15
15.5
Gain (dB)
16
16.5
0
19
20
21
22
23
24
25
26
P1dB (dBm)
Figure 4. Gain @ 2 GHz, 4V, 135 mA.
LSL = 14 dBm, Nominal = 15.5 dBm,
USL = 17 dBm.
Figure 5. P1dB @ 2 GHz, 4V, 135 mA.
Nominal = 23 dBm.
Notes:
1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V,
135 mA quiesent bias.
Typical Gammas at Optimum OIP3
[1]
Freq
(GHz)
0.9
2.0
3.9
5.8
Gamma Source
Mag
Ang (deg)
0.8179
0.7411
0.6875
0.5204
-143.28
-112.36
-94.23
-75.91
Gamma Load
Mag
Ang (deg)
0.0721
0.4080
0.4478
0.3525
124.08
119.91
174.74
-120.13
OIP3
(dBm)
42.0
41.6
41.3
36.9
Gain
(dB)
17.2
15.6
11.2
5.6
P1dB
(dBm)
21.7
23.4
23.1
22.4
PAE
(%)
33.8
44.2
41.4
25.7
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
400
350
300
Ids (mA)
0.9V
0.8V
250
200
150
100
50
0
0
1
2
3
4
5
0.6V
0.5V
0.7V
6
7
Vds (V)
Figure 6. Typical IV Curve.
4
ATF-53189 Typical Performance Curves
(at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
45
45
45
40
40
40
OIP3 (dBm)
OIP3 (dBm)
30
3V
4V
5V
90
105
120
135
150
165
180
30
3V
4V
5V
90
105
120
135
150
165
180
OIP3 (dBm)
35
35
35
30
3V
4V
5V
90
105
120
135
150
165
180
25
25
25
20
75
20
75
20
75
Ids (mA)
Ids (mA)
Ids (mA)
Figure 7. OIP3 vs. Ids and Vds at 900 MHz.
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz.
19
18
17
19
18
17
14
12
10
GAIN (dB)
GAIN (dB)
16
15
14
13
12
75
3V
4V
5V
90
105
120
135
150
165
180
16
15
14
13
12
75
3V
4V
5V
90
105
120
135
150
165
180
GAIN (dB)
8
6
4
2
0
75
3V
4V
5V
90
105
120
135
150
165
180
Ids (mA)
Ids (mA)
Ids (mA)
Figure 10. Small Signal Gain vs. Ids and Vds
at 900 MHz.
40
Figure 11. Small Signal Gain vs. Ids and Vds
at 2 GHz.
8
Figure 12. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
30
25
Gain_3V
Pout_3V
PAE_3V
60
50
40
30
20
10
0
-10
-6
-2
Pin (dBm)
2
6
10
GAIN (dB) & Pout (dBm)
35
6
20
15
10
5
0
-14
OIP3 (dBm)
GAIN (dB)
30
4
25
3V
4V
5V
90
105
120
135
150
165
180
2
3V
4V
5V
90
105
120
135
150
165
180
20
75
0
75
Ids (mA)
Ids (mA)
Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz.
Figure 14. Small Signal Gain vs. Ids and Vds
at 5.8 GHz.
Figure 15. Small Signal Gain/Pout/PAE vs.
Pin at Vds=3V and Freq = 900 MHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
5
PAE (%)
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