HYB3165160T-60 datasheet, PDF - EEWORLD Datasheet

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HYB3165160T-60: Description4M x 16-Bit Dynamic RAM; Categorystorage storage; File Size373KB，26 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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HYB3165160T-60 Overview

4M x 16-Bit Dynamic RAM

HYB3165160T-60 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G54
memory density	67108864 bi
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal location	DUAL

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4M x 16-Bit Dynamic RAM

(4k & 8k Refresh)

HYB 3164160T -50/-60

HYB 3165160T -50/-60

Preliminary Information

•

4 194 304 words by 16-bit organization

0 to 70 ˚C operating temperature

Fast access and cycle time

RAS access time:

50 ns (-50 version)

60 ns (-60 version)

Cycle time:

90 ns (-50 version)

110 ns (-60 version)

CAS access time:

13 ns ( -50 version)

15 ns ( -60 version)

Fast page mode cycle time

35 ns (-50 version)

40 ns (-60 version)

Single + 3.3 V (± 0.3V) power supply

Low power dissipation

max. 396 active mW ( HYB 3164160T-50)

max. 360 active mW ( HYB 3164160T-60)

max. 504 active mW ( HYB 3165160T-50)

max. 432 active mW ( HYB 3165160T-60)

7.2 mW standby (TTL)

720 W standby (MOS)

Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh modes

Fast page mode capability

2 CAS / 1 WRITE byte control

8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164160T)

4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165160T)

Plastic Package: P-TSOPII-54-1 500 mil

Semiconductor Group

HYB3165160T-60 Related Products

	HYB3165160T-60	HYB3164160T-50	HYB3165160T-50	HYB3164160T	HYB3164160T-60
Description	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM
Maker	SIEMENS	SIEMENS	SIEMENS	-	SIEMENS
Reach Compliance Code	unknow	unknow	unknow	-	unknow
ECCN code	EAR99	EAR99	EAR99	-	EAR99
access mode	FAST PAGE	FAST PAGE	FAST PAGE	-	FAST PAGE
Maximum access time	60 ns	50 ns	50 ns	-	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	-	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	-	R-PDSO-G54
memory density	67108864 bi	67108864 bi	67108864 bi	-	67108864 bi
Memory IC Type	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	-	FAST PAGE DRAM
memory width	16	16	16	-	16
Number of functions	1	1	1	-	1
Number of ports	1	1	1	-	1
Number of terminals	54	54	54	-	54
word count	4194304 words	4194304 words	4194304 words	-	4194304 words
character code	4000000	4000000	4000000	-	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	-	70 °C
organize	4MX16	4MX16	4MX16	-	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE	-	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
refresh cycle	4096	8192	4096	-	8192
self refresh	YES	YES	YES	-	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	-	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V
surface mount	YES	YES	YES	-	YES
technology	CMOS	CMOS	CMOS	-	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	-	GULL WING
Terminal location	DUAL	DUAL	DUAL	-	DUAL

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