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HYB18T512400AF-3.7

Description
512-Mbit DDR2 SDRAM
Categorystorage    storage   
File Size2MB,117 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

HYB18T512400AF-3.7 Overview

512-Mbit DDR2 SDRAM

HYB18T512400AF-3.7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codecompli
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)267 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length10.5 mm
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize128MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.004 A
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10 mm
D a t a S he et , Rev. 1.3, J a n. 2 00 5
HYB18T512400AF
HYB18T512800AF
HYB18T512160AF
512-Mbit DDR2 SDRAM
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