HY62SF16403ALLM-I datasheet, PDF

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HY62SF16403ALLM-I: Description256Kx16bit full CMOS SRAM; File Size121KB，10 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY62SF16403ALLM-I Overview

256Kx16bit full CMOS SRAM

HY62SF16403ALLM-I Preview

HY62SF16403A Series

256Kx16bit full CMOS SRAM

Document Title

256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM

Revision History

Revision No

History

Icc1 Value change.

30mA -> 20mA

Marking Information add

tBLZ / tOLZ value is changed

Output Load is redefined

Isb, Isb1, Vdr, Iccdr are redefined

Changed Logo

Changed Isb1 values

Draft Date

Nov.22.2000

Remark

Final

Dec.18.2000

Final

Mar.23.2001

Jun.07.2001

Final

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev.11 / Jun.01

Hynix Semiconductor

HY62SF16403A Series

DESCRIPTION

The HY62SF16403A is a high speed, super low

power and 4Mbit full CMOS SRAM organized as

256K words by 16bits. The HY62SF16403A uses

high performance full CMOS process technology

and is designed for high speed and low power

circuit technology. It is particularly well-suited for

the high density low power system application.

This device has a data retention mode that

guarantees data to remain valid at a minimum

power supply voltage of 1.2V.

FEATURES

•

Fully static operation and Tri-state output

•

TTL compatible inputs and outputs

•

Battery backup

-. 1.2V(min) data retention

•

Standard pin configuration

-. 48-ball uBGA

Product No.

Voltage

(V)

Speed (ns)

Operation

Current/Icc(mA)

HY62SF16403A

1.7~2.3

85/100/120

HY62SF16403A-I 1.7~2.3

85/100/120

Note 1. Blank : Commercial, I : Industrial

2. Current value is max.

Standby

Current(uA)

Temperature

(°C)

0~70

-40~85(I)

PIN CONNECTION

/OE

/UB

A16

A15

A13

A10

/CS

IO2

IO4

IO5

IO6

IO1

IO3

Vcc

Vss

IO7

A17

ADD INPUT

BUFFER

PRE DECODER

BLOCK DIAGRAM

ROW

DECODER

/LB

IO9

I/O1

SENSE AMP

COLUMN

DECODER

IO10 IO11 A5

Vss

Vcc

IO12 A17

IO13 NC

I/O8

DATA I/O

BUFFER

MEMORY ARRAY

256K x 16

WRITE DRIVER

I/O9

BLOCK

DECODER

IO15 IO14 A14

IO16 NC

A12

I/O16

/WE IO8

A11

/CS

/OE

/LB

/UB

/WE

uBGA

PIN DESCRIPTION

Pin Name

/CS

/WE

/OE

/LB

/UB

Pin Function

Chip Select

Write Enable

Output Enable

Lower Byte Control(I/O1~I/O8)

Upper Byte Control(I/O9~I/O16)

Pin Name

I/O1~I/O16

A0~A17

Vcc

Vss

Pin Function

Data Inputs/Outputs

Address Inputs

Power(1.7~2.3)

Ground

No Connection

Rev.11 / Jun.01

HY62SF16403A Series

ORDERING INFORMATION

Part No.

HY62SF16403ALLM

HY62SF16403ASLM

HY62SF16403ALLM-I

HY62SF16403ASLM-I

Speed

85/100/120

Power

LL-part

SL-part

LL-part

SL-part

Temp

Package

uBGA

Note 1. Blank : Commercial, I : Industrial

ABSOLUTE MAXIMUM RATINGS (1)

Symbol

IN,

OUT

Vcc

STG

SOLDER

Parameter

Input/Output Voltage

Power Supply

Operating Temperature

Storage Temperature

Power Dissipation

Ball Soldering Temperature & Time

Rating

-0.3 to 2.6

-0.3 to 3.6

0 to 70

-40 to 85

-55 to 150

1.0

260

•

Unit

°C

°C•sec

Remark

HY62SF16403A

HY62SF16403A-I

Note

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is stress rating only and the functional operation of the device under these or

any other conditions above those indicated in the operation of this specification is not implied.

Exposure to the absolute maximum rating conditions for extended period may affect reliability.

TRUTH TABLE

/CS

/WE

/OE

/LB

/UB

Mode

Deselected

Output Disabled

Read

I/O Pin

I/O1~I/O8

I/O9~I/O16

High-Z

OUT

High-Z

OUT

High-Z

OUT

High-Z

Power

Standby

Active

Write

Active

Note:

1. H=V

, L=V

, X=don't care (V

IL or

)

2. /UB, /LB(Upper, Lower Byte enable)

These active LOW inputs allow individual bytes to be written or read.

When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.

When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.

Rev.11 / Jun.01

HY62SF16403A Series

RECOMMENDED DC OPERATING CONDITION

Symbol

Vcc

Vss

Parameter

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

Min.

1.7

1.4

-0.3

Typ

1.8

Max.

2.3

Vcc+0.3

0.4

Unit

Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns

2. Undershoot is sampled, not 100% tested.

DC ELECTRICAL CHARACTERISTICS

= 0°C to 70°C / -40°C to 85°C (I)

Sym

Parameter

Input Leakage Current

Icc

Output Leakage Current

Operating Power Supply Current

Test Condition

Vss < V

< Vcc

Vss < V

OUT

< Vcc, /CS = V

or /WE = V

IH ,

/LB = V

/CS = V

= V

or V

IL,

I/O =

0mA

/CS = V

IL,

= V

or V

IL,

Cycle Time = Min,

100% Duty, I

I/O =

0mA

/CS < 0.2V

< 0.2V or V

> Vcc-0.2V

Cycle Time = 1us,

100% Duty, I

I/O =

0mA

/CS = V

or /UB, /LB = V

= V

or V

/CS > Vcc - 0.2V or

/UB, /LB > Vcc - 0.2V

> Vcc - 0.2V or

< Vss + 0.2V

= 0.1mA

OH =

-0.1mA

Min

-1

Typ

Max

Unit

CC1

Average Operating Current

Standby Current

(TTL Input)

0.3

0.1

1.6

0.2

SB1

Standby Current

(CMOS Input)

Output Low

Output High

Note

1. Typical values are at Vcc = 1.8V T

= 25°C

2. Typical values are not 100% tested

CAPACITANCE

(Temp = 25°C, f= 1.0MHz)

Symbol

Parameter

Input Capacitance(Add, /CS,/LB,/UB, /WE, /OE)

OUT

Output Capacitance(I/O)

Note : These parameters are sampled and not 100% tested

Condition

= 0V

I/O

= 0V

Max.

Unit

Rev.11 / Jun.01

HY62SF16403A Series

AC CHARACTERISTICS

= 0°C to 70°C / -40°C to 85°C (I), unless otherwise specified

85ns

Symbol

Parameter

Min. Max.

READ CYCLE

tRC

Read Cycle Time

tAA

Address Access Time

tACS

Chip Select Access Time

tOE

Output Enable to Output Valid

tBA

/LB, /UB Access Time

tCLZ

Chip Select to Output in Low Z

tOLZ

Output Enable to Output in Low Z

tBLZ

/LB, /UB Enable to Output in Low Z

tCHZ

Chip Deselection to Output in High Z

10 tOHZ

Out Disable to Output in High Z

11 tBHZ

/LB, /UB Disable to Output in High Z

12 tOH

Output Hold from Address Change

WRITE CYCLE

13 tWC

Write Cycle Time

14 tCW

Chip Selection to End of Write

15 tAW

Address Valid to End of Write

16 tBW

/LB, /UB Valid to End of Write

17 tAS

Address Set-up Time

18 tWP

Write Pulse Width

19 tWR

Write Recovery Time

20 tWHZ

Write to Output in High Z

21 tDW

Data to Write Time Overlap

22 tDH

Data Hold from Write Time

23 tOW

Output Active from End of Write

100ns

Min. Max.

100

120ns

Min

Max.

120

100

120

Unit

AC TEST CONDITIONS

= 0°C to 70°C / -40°C to 85°C (I), unless otherwise specified

Parameter

Input Pulse Level

Input Rise and Fall Time

Input and Output Timing Reference Level

Output Load

tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW

Others

Value

0.4V to 1.6V

5ns

0.9V

CL = 5pF + 1TTL Load

CL = 30pF + 1TTL Load

AC TEST LOADS

=1.8V

4091 Ohm

OUT

CL(1)

3273 Ohm

Note 1. Including jig and scope capacitance.

Rev.11 / Jun.01

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HY62SF16403ALLM-I Related Products

	HY62SF16403ALLM-I	HY62SF16403A	HY62SF16403ASLM	HY62SF16403ALLM	HY62SF16403A-I	HY62SF16403ASLM-I
Description	256Kx16bit full CMOS SRAM	256Kx16bit full CMOS SRAM	256Kx16bit full CMOS SRAM	256Kx16bit full CMOS SRAM	256Kx16bit full CMOS SRAM	256Kx16bit full CMOS SRAM

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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