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HY5V22F-8

Description
4 Banks x 1M x 32Bit Synchronous DRAM
Categorystorage    storage   
File Size906KB,15 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY5V22F-8 Overview

4 Banks x 1M x 32Bit Synchronous DRAM

HY5V22F-8 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA, BGA90,9X15,32
Contacts90
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
JESD-609 codee1
length13 mm
memory density134217728 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals90
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
Revision History
Revision No.
0.1
History
Defined Preliminary Specification
1)
2)
3)
4)
5)
6)
Modified FBGA Ball Configuration Typo.
Changed Functional Block Diagram from A10 to A11.
Changed V
DD
min from 3.0V to 3.135V.
Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.
Insert t
AC2
Value.
Insdrt t
RAS
& CLK Value.
Remark
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Defined I
DD
Spec.
Delited Preliminary.
Changed I
DD
Spec.
133MHz Speed Added
Changed FBGA Package Size from 11x13 to 8x13.
1) Changed V
DD
min from 3.135V to 3.0V.
2) Changed V
IL
min from V
SSQ
-0.3V to -0.3V.
Modified of size erra. (Page15)
(Equation :
13.00
±
10
-> 13.00
±
0.10)
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
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