HY29F040AR-15I datasheet, PDF - EEWORLD Datasheet

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HY29F040AR-15I: Description512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory; Categorystorage storage; File Size196KB，40 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY29F040AR-15I Overview

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

HY29F040AR-15I Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	TSOP
package instruction	REVERSE, TSOP-32
Contacts	32
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	150 ns
Other features	MINIMUM 100000 PROGRAM/ERASE CYCLES
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Department size	64K
Maximum standby current	0.001 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	8 mm

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HY29F040A Series

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

KEY FEATURES

5.0 V ± 10% Read, Program, and Erase

- Minimizes system-level power requirements

High performance

55 ns access time

Compatible with JEDEC-Standard Commands

- Uses software commands, pinouts, and

packages following industry standards for

single power supply Flash memory

Minimum 100,000 Program/Erase Cycles

Sector Erase Architecture

- Eight equal size sectors of 64K bytes each

- Any combination of sectors can be erased

concurrently; also supports full chip erase

Erase Suspend/Resume

- Suspend a sector erase operation to allow a

data read or programming in a sector not

being erased within the same device

Internal Erase Algorithms

- Automatically erases a sector, any combination

of sectors, or the entire chip

Internal Programming Algorithms

- Automatically programs and verifies data at a

specified address.

Low Power Consumption

- 40 mA maximum active read current

- 60 mA maximum program/erase current

- 5

maximum standby current

Sector Protection

- Hardware method disables any combination

of sectors from a program or erase operation

DESCRIPTION

The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS

Flash memory device organized as a 512K bytes

of 8 bits each. The device is offered in standard

32-pin PDIP, 32-pin PLCC and 32-pin TSOP pack-

ages. It is designed to be programmed and

erased in-system with a 5.0 volt power-supply and

can also be reprogrammed in standard PROM

programmers.

The HY29F040A offers access times of 55 ns, 70

ns, 90 ns, 120 ns and 150 ns. The device has sepa-

rate chip enable (/CE), write enable (/WE) and out-

put enable (/OE) controls. Hyundai Flash memory

devices reliably store memory data even after

100,000 program/erase cycles.

The HY29F040A is entirely pin and command set

compatible with the JEDEC standard for 4 Mega-

bit Flash memory devices. The commands are writ-

ten to the command register using standard micropro-

cessor write timings. Register contents serve as

input to an internal state-machine which controls

the erase and programming circuitry. Write cycles

also internally latch addresses and data needed

for the programming and erase operations.

The HY29F040A is programmed by executing the

program command sequence. This will start the

internal byte programming algorithm that

automatically times the program pulse width and

also verifies the proper cell margin. Erase is

accomplished by executing either sector erase or

chip erase command sequence. This will start the

internal erasing algorithm that automatically times

the erase pulse width and also verifies the proper

cell margin. No preprogramming is required prior to

execution of the internal erase algorithm. Sectors

of the HY29F040A Flash memory array are electri-

cally erased via Fowler-Nordheim tunneling. Bytes

are programmed one byte at a time using a hot

electron injection mechanism.

The HY29F040A features a sector erase architecture.

The device memory array is divided into 8 sectors of

64K bytes each. The sectors can be erased indi-

vidually or in groups without affecting the data in

other sectors. The multiple sector erase and full

chip erase capabilities add flexibility to altering the

data in the device. To protect data in the device

from accidental program and erase, the device

also has a sector protect function. This function

hardware write protects the selected sectors. The sector

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licences are implied.

Rev.03/Aug.97

Hyundai Semiconductor

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