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HX80ML

Description
0.02 A, 8000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size83KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

HX80ML Overview

0.02 A, 8000 V, SILICON, SIGNAL DIODE

HX80ML Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)20 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current3 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.02 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8000 V
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
HV HX
HIGH VOLTAGE RECTIFIERS
ULTRA-MINIATURE
AND MINIATURE
SMALL SIZE EPOXY PACKAGES
FAST AND STANDARD RECOVERY TIMES
PRV TO 10,000 VOLTS
VERY LOW REVERSE LEAKAGE
Peak
Reverse Voltage
PRV (Volts)
Avg.Forward
Current
I
O
(mA) 100
o
C
Max.Fwd
Vol tage
@ 10mA &
o
25 C
Max. Peak
Surge Cureent,
I
FSM
(8.3 ms) (Amps)
EDI
Type No.
Package
Style
ULTRA-MINIATURE, STANDARD RECOVERY
HV 15 PD
HV 20 PD
HV 25 PD
HV 30 PD
HV 10 P
HV 20 P
HV 30 P
HV 40 P
HV 50 P
1,500
2,000
2,500
3,000
1,000
2,000
3,000
4,000
5,000
80
6.0
5
P
50
6.0
5
P
ULTRA-MINIA TURE, 100 NANOSECOND RECOVERY
HX 15 PD
HX 20 PD
HX 25 PD
HX 30 PD
HX 10 P
HX 20 P
HX 30 P
HX 40 P
HX 50 P
1,500
2,000
2,500
3,000
1,000
2,000
3,000
4,000
5,000
60
6.0
3
(FIG.4)
P
40
10.0
3
P
MINIATURE, 100 NANOSECOND RECOVERY (FIG.4)
HX 10 M
HX 20 M
HX 30 M
HX 40 M
HX 50 M
HX 60 ML
HX 80 ML
HX 100 ML
1,000
2,000
3,000
4,000
5,000
6,000
8,000
10,000
40
10.0
3
M
20
20.0
3
M
EDI reserves the right to change these specifications at any time without notice.
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