HX6408KVNM datasheet, PDF - EEWORLD Datasheet

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HX6408KVNM: Description512k x 8 STATIC RAM; Categorystorage storage; File Size165KB，11 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HX6408KVNM Overview

512k x 8 STATIC RAM

HX6408KVNM Parametric

Parameter Name	Attribute value
Maker	Honeywell
Parts packaging code	DIE
package instruction	DIE,
Contacts	35
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	25 ns
JESD-30 code	R-XUUC-N35
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	35
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	UNSPECIFIED
encapsulated code	DIE
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal location	UPPER

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HX6408

Advanced Information

HX6408

512k x 8 STATIC RAM

The 512K x 8 Radiation Hardened Static RAM is a high

performance 524,288 word x 8-bit static random access

memory with optional industry-standard functionality. It is

fabricated with Honeywell’s radiation hardened Silicon On

Insulator (SOI) technology, and is designed for use in low

voltage systems operating in radiation environments. The

RAM operates over the full military temperature range and

requires only a single 3.3 V ± 0.3V power supply. Power

consumption is typically <30 mW @ 1MHz in write mode,

<14 mW @ 1MHz in read mode, and is less than 5 mW

when in standby mode.

Honeywell’s enhanced RICMOS™(Radiation Insensitive

CMOS) SOI V technology is radiation hardened through the

use of advanced and proprietary design, layout and process

hardening techniques.

The RICMOS™ V low power process is a SOI CMOS

technology with an 80 Å gate oxide and a minimum

drawn feature size of 0.35

µm.

Additional features

include tungsten via and contact plugs, Honeywell’s

proprietary SHARP planarization process and a lightly

doped drain (LDD) structure for improved short

channel reliability. A seven transistor (7T) memory cell

is used for superior single event upset hardening,

while three layer metal power busing and the low

collection volume SOI substrate provide improved

dose rate hardening.

FEATURES

Fabricated with RICMOS™ V

Silicon On Insulator (SOI)

0.35 mm Process (L

eff

= 0.28 µm)

Total Dose

≥

3x10

and 1X10

rad(SiO

)

Neutron

≥1x10

-2

No Latchup

Read/Write Cycle Times

≤20

ns, (3.3 V), -55 to 125°C

Typical Operating Power (3.3 V)

<14 mW @ 1MHz Read

<30 mW @ 1MHz Write

<5 mW Standby mode

Asynchronous Operation

CMOS Compatible I/O

Single Power Supply,

3.3 V ± 0.3 V

Operating Range is

-55°C to +125°C

36-Lead Flat Pack Package

Optional Low Power Sleep

Mode

Dynamic and Static Transient Upset

≥1x10

rad(Si)/s (3.3 V)

Dose Rate Survivability

≥1x10

rad(Si)/s

Soft Error Rate

≤1x10

-10

Upsets/bit-day (3.3 V)

www.honeywell.com

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