HN1K02FU datasheet, PDF - EEWORLD Datasheet

HN1K02FU: DescriptionN CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS); CategoryDiscrete semiconductor The transistor; File Size194KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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HN1K02FU Overview

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	40 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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