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HMN28D-150I

Description
Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
File Size170KB,9 Pages
ManufacturerHANBIT Electronics
Websitehttp://www.hbe.co.kr/
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HMN28D-150I Overview

Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V

HANBit
HMN28D
Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
Part No. HMN28D
GENERAL DESCRIPTION
The HMN28D are 16,384-bit, fully static, nonvolatile SRAM’s organized as 2,048 bytes by 8 bits. Each NVSRAM has a
self-contained lithium energy source and control circuitry, which constantly monitors Vcc for an out-of-tolerance condition.
When such a condition occurs, the lithium energy source is automatically switched on and writes protection is
unconditionally enabled to prevent data corruption. The HMN28D devices can be used in place of existing 2K x 8 SRAM’s
directly conforming to the popular byte wide 24-pin DIP standard. There is no limit on the number of write cycles that can
be executed and no additional support circuitry is required for microprocessor interfacing.
The HMN28D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w
Access time : 70, 85, 120 and 150ns
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High-density design : 2KByte Design
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Battery internally isolated until power is applied
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JEDEC standard 24-pin DIP Package
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Low-power CMOS
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Unlimited writes cycles
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Data retention in the absence of V
CC
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10-years minimum data retention in absence of power
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Automatic write-protection during power-up/power-down
cycles
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Data is automatically protected during power loss
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Conventional SRAM operation; unlimited write cycles
PIN ASSIGNMENT
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A8
A9
/WE
/OE
A10
/CE
DQ7
DQ6
DQ5
DQ4
DQ3
24-pin Encapsulated package
OPTIONS
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Timing
70 ns
85 ns
120 ns
150 ns
MARKING
-70
-85
-120
-150
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1
HANBit Electronics Co.,Ltd

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