Pe
h
a
s
C
o
r
n
lt
o
T
s
rr
h
t
i
y
SC
SC
1
I
TRMS
= 2300 A
0
I
TAVM
= 1000 A
V
RRM
= 1800 - 2500
V
V
RSM
V
DSM
V
1800
2200
2500
V
RRM
V
DRM
V
1800
2200
2500
Type
1
2
2
4
3 4
3
CS 1011 - 18io1
CS 1011 - 22io1
CS 1011 - 25io1
1
Symbol
I
TRMS
I
TAVM
I
TSM
Test Conditions
T
C
= 82°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
2300
1000
19800
21000
18000
20000
1960000
1830000
1620000
1660000
320
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
Typical Applications
q
q
Features
q
q
q
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
q
q
G h w Ìt qse d xs
g v t e Ì h dÌu d b
Ì
6 wÌ ` h s q w s` c `p f
s d s w t ` v ` c ÌË b ` d
9 s d r w aqwe q b h f
t f w Ì v ` h h ta t p s
yq ` d
t w fv
4 w ` c` h h Ìb w t dË s
` d s xq ` ` g c h
b s dwt
t sb h s
Ë hs f w
rqe f ` d
h
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 2500 A
f = 5 Hz, t
P
=200 ms
V
D
= 1/2 V
DRM
I
G
= 2 A
di
G
/dt = 2 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30
µs
t
P
= 500
µs
t
P
= 10 ms
(dv/dt)
cr
P
GM
1000
120
60
16
5
-40...+125
125
-40...+ 50
V/µs
W
W
W
V
°C
°C
°C
kN
g
q
1 @wÌtwt
0 t tbs Ìq
C Ìb s d w Ì
td t y Ì d
Ë Ìb s Ì q d
0 td t w t q Ì
V
RGM
T
VJ
T
VJM
T
stg
M
d
Weight
Data according to DIN/IEC 747-6
IXYS reserves the right to change limits, test conditions and dimensions
©1996 IXYS Corporation. All rights reserved.
Mounting force
24 ... 28
600
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
CS 1011
Symbol
I
R
, I
D
V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
L
I
H
t
gd
t
q
R
thJC
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
= 3.14 I
TAVM
;T
VJ
= 25°C
Characteristic Values
≤
≤
60
2.1
1.2
0.32
≤
≤
≤
≤
≤
≤
3.0
300
0.25
1.0
0.3
2.5
mA
V
V
mΩ
V
mA
V
A
A
µs
µs
K/W
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 12 V;
V
D
= 12 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= 25°C
V
D
= 2/3 V
DRM
T
VJ
= 25°C; t
P
= 10
µs
I
G
= 2 A; di
G
/dt = 2 A/µs
T
VJ
= 25°C; V
D
= 12 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 500 V
I
G
= 2 A; di
G
/dt = 2 A/µs
T
VJ
= T
VJM
; I
T
= 1000 A, t
P
= 200
µs;
di/dt = -10 A/µs typ. 150
V
R
= 100 V; dv/dt = 50 V/µs; V
D
= 2/3 V
DRM
0.02
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions, and dimensions.
stm32/stm8
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