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HBAT54S

Description
Silicon Schottky Barrier Double Diodes
CategoryDiscrete semiconductor    diode   
File Size33KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric Compare View All

HBAT54S Overview

Silicon Schottky Barrier Double Diodes

HBAT54S Parametric

Parameter NameAttribute value
MakerHSMC
Reach Compliance Codeunknow
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
Maximum non-repetitive peak forward current0.6 A
Maximum operating temperature125 °C
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes
HBAT54: Single Diode, also available as double diodes.
HBAT54A: Common Anode.
HBAT54C: Common Cathode.
HBAT54S: Series Connected.
Diagram:
3
3
SOT-23
1
2
1
2
HBAT54
3
HBAT54A
3
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
1
2
1
2
HBAT54C
HBAT54S
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................................................. -65~+125
°C
Junction Temperature .................................................................................................................................... +125
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 230 mW
Maximum Voltages and Currents (T
A
=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics
(T
A
=25°C)
Characteristic
Reverse breakdown Voltage
Symbol
V
(BR)
V
F(1)
V
F(2)
Forward Voltage
V
F(3)
V
F(4)
V
F(5)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
T
rr
I
R
=10uA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1V, f=1MHz
I
F
=I
R
=10mA, R
L
=100Ω,
measured at I
R
=1mA
Condition
Min.
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
uA
pF
nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification

HBAT54S Related Products

HBAT54S HBAT54 HBAT54A HBAT54C HBAT54X
Description Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes
Maker HSMC HSMC HSMC HSMC -
Reach Compliance Code unknow unknow unknow unknow -
ECCN code EAR99 EAR99 EAR99 EAR99 -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 0.24 V 0.24 V 0.24 V 0.24 V -
Maximum non-repetitive peak forward current 0.6 A 0.6 A 0.6 A 0.6 A -
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C -
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 30 V -
Maximum reverse recovery time 0.005 µs 0.005 µs 0.005 µs 0.005 µs -
surface mount YES YES YES YES -
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY -

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