GS8662R08E-200I datasheet, PDF

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GS8662R08E-200I: Description72Mb SigmaCIO DDR-II Burst of 4 SRAM; Categorystorage storage; File Size932KB，37 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8662R08E-200I Overview

72Mb SigmaCIO DDR-II Burst of 4 SRAM

GS8662R08E-200I Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	15 MM X 17 MM, 1MM PITCH, FPBGA-165
Contacts	165
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	67108864 bi
Memory IC Type	DDR SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX8
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

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Preliminary

GS8662R08/09/18/36E-333/300/250/200/167

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• Simultaneous Read and Write SigmaCIO™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36 and x18) and Nybble Write (x8) function

• Burst of 4 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with present 9Mb, 18Mb, 36Mb and future

144Mb devices

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

72Mb SigmaCIO DDR-II

Burst of 4 SRAM

333 MHz–167 MHz

1.8 V V

1.8 V and 1.5 V I/O

Bottom View

165-Bump, 15 mm x 17 mm BGA

1 mm Bump Pitch, 11 x 15 Bump Array

clock inputs, not differential inputs. If the C clocks are tied

high, the K clocks are routed internally to fire the output

registers instead.

Common I/O x36 and x18 SigmaCIO DDR-II B4 RAMs

always transfer data in four packets. When a new address is

loaded, A0 and A1 preset an internal 2 bit linear address

counter. The counter increments by 1 for each beat of a burst of

four data transfer. The counter always wraps to 00 after

reaching 11, no matter where it starts.

Common I/O x8 SigmaCIO DDR-II B4 RAMs always transfer

data in four packets. When a new address is loaded, the LSBs

are internally set to 0 for the first read or write transfer, and

incremented by 1 for the next 3 transfers. Because the LSBs

are tied off internally, the address field of a x8 SigmaCIO

DDR-II B4 RAM is always two address pins less than the

advertised index depth (e.g., the 4M x 18 has a 1024K

addressable index).

SigmaCIO™ Family Overview

The GS8662R08/09/18/36E are built in compliance with the

SigmaCIO DDR-II SRAM pinout standard for Common I/O

synchronous SRAMs. They are 75,497,472-bit (72Mb)

SRAMs. The GS8662R08/09/18/36E SigmaCIO SRAMs are

just one element in a family of low power, low voltage HSTL

I/O SRAMs designed to operate at the speeds needed to

implement economical high performance networking systems.

Clocking and Addressing Schemes

The GS8662R08/09/18/36E SigmaCIO DDR-II SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer. The device also allows the user to manipulate the

output register clock inputs quasi independently with the C and

C clock inputs. C and C are also independent single-ended

Parameter Synopsis

-333

tKHKH

tKHQV

3.0 ns

0.45 ns

-300

3.3 ns

0.45 ns

-250

4.0 ns

0.45 ns

-200

5.0 ns

0.45 ns

-167

6.0 ns

0.5 ns

Rev: 1.01 9/2005

1/37

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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