IRFR3707ZPbF
IRFU3707ZPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
Qg
D
D
Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
30V
9.5m
9.6nC
S
G
G
S
D
Benefits
Very Low R
DS(on)
at 4.5V V
GS
Ultra - Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free
D- Pak
IRFR3707ZPbF
I- Pak
IRFU3707ZPbF
G
Gate
D
Drain
S
Source
Base part number
IRFU3707ZPbF
IRFR3707ZPbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU3707ZPbF
IRFR3707ZPbF
IRFR3707ZTRLPbF
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain -to-Source Voltage
Gate-to-Source Voltage
Parameter
Max.
30
± 20
56
39
220
50
25
0.33
-55 to + 175
300
Units
V
V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
A
W
W
W/°C
°C
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient ( PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Typ.
–––
–––
–––
Max.
3.0
50
110
Units
°C/W
Notes
through
are on page 2.
1
2016-5-31
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Trans conductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
IRFR/U3707ZPbF
Min. Typ. Max. Units
Conditions
30
–––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.023 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
7.5
9.5
V
GS
= 10V, I
D
= 15A
m
–––
10
12.5
V
GS
= 4.5V, I
D
= 12A
1.35 1.80 2.25
V
V
DS
= V
GS
, I
D
= 25µA
––– -5.0 ––– mV/°C
–––
–––
–––
–––
71
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.6
2.6
0.90
3.5
2.6
4.4
5.8
8.0
11
12
3.3
1150
260
120
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
DS
= 15V
V = 4.5V
nC
GS
I
D
= 12A
See Fig. 16
nC V
DS
= 15V, V
GS
= 0V
V
DD
= 16V,V
GS
= 4.5V
I
D
= 12A
ns
Clamped Inductive Load
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Max.
42
12
5.0
Avalanche Characteristics
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
17
Max. Units
56
A
220
1.0
38
26
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 12A,V
GS
= 0V
T
J
= 25°C ,I
F
= 12A, V
DS
= 15V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature
starting T
J
= 25°C, L = 0.58mH, R
G
= 25, I
AS
= 12A.
Pulse width
400µs;
duty cycle
2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
2016-5-31
IRFR/U3707ZPbF
10000
TOP
1000
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
100
BOTTOM
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
10
1
0.1
10
2.2V
1
2.2V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
0.001
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
2.0
100
T J = 175°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
)
ID = 30A
VGS = 10V
1.5
10
1
1.0
0.1
T J = 25°C
VDS = 10V
20µs PULSE WIDTH
0.01
0
2
4
6
8
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
2016-5-31
3
IRFR/U3707ZPbF
10000
6.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
ID= 12A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS = 24V
VDS = 15V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
1
10
100
0
2
4
6
8
10
12
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1.00
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
10msec
0.10
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD , Source-to-Drain Voltage (V)
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2016-5-31
IRFR/U3707ZPbF
60
50
ID, Drain Current (A)
2.5
Limited By Package
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS(th) Gate threshold Voltage (V)
2.0
ID = 250µA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J
J
1
0.1
R
1
R
1
2
R
2
R
2
R
3
R
3
C
3
C
Ri (°C/W)
0.823
1.698
0.481
i
(sec)
0.000128
0.000845
0.016503
1
2
3
0.01
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-31
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
