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DSB30C60PB

Description
Schottky Diodes & Rectifiers 30 Amps 60V
CategoryDiscrete semiconductor    diode   
File Size90KB,4 Pages
ManufacturerIXYS
Environmental Compliance
Download Datasheet Parametric View All

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DSB30C60PB Overview

Schottky Diodes & Rectifiers 30 Amps 60V

DSB30C60PB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE
applicationSOFT RECOVERY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.64 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
DSB30C60PB
preliminary
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
= 2x
=
60 V
15 A
0.64 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSB30C60PB
Backside: cathode
1
2
3
Features / Advantages:
Very low Vf
Extremely low switching losses
Low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Package:
TO-220
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131030a
© 2013 IXYS all rights reserved
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