PD - 95144
IRFL4310PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Ease of Paralleling
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
D
V
DSS
= 100V
R
DS(on)
= 0.20Ω
G
S
I
D
= 1.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
2.2
1.6
1.3
13
2.1
1.0
8.3
± 20
47
1.6
0.10
5.0
-55 to + 150
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93
48
Max.
120
60
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
04/22/04
IRFL4310PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
100 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.20
Ω
V
GS
= 10V, I
D
= 1.6A
2.0
1.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
17
25
2.1 3.1
7.8
12
7.8 –––
18 –––
34
–––
20
–––
330 –––
92 –––
54 –––
V
S
µA
nA
nC
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 50V, I
D
= 0.80 A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 1.6A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 1.6A
R
G
= 6.2
Ω
R
D
= 31
Ω,
See Fig. 10
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
ns
pF
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
72
210
0.91
A
13
1.3
110
320
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.6A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
R
G
= 25Ω, I
AS
= 3.2A. (See Figure 12)
I
SD
≤
1.6A, di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
V
DD
= 25V, starting T
J
= 25°C, L = 9.2 mH
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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