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BSC090N03MSGATMA1

Description
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
CategoryDiscrete semiconductor    The transistor   
File Size464KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC090N03MSGATMA1 Overview

MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M

BSC090N03MSGATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time26 weeks
Avalanche Energy Efficiency Rating (Eas)10 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.0112 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)192 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSC090N03MS G
OptiMOS™3
M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC090N03MS G
Package
PG-TDSON-8
Marking
090N03MS
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
9
11.2
48
PG-TDSON-8
A
V
mW
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
48
30
43
27
Unit
A
12
192
40
10
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=35 A,
R
GS
=25
W
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17

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Description MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
Configuration SINGLE WITH BUILT-IN DIODE Single
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