BA479G, BA479S
www.vishay.com
Vishay Semiconductors
RF PIN Diodes - Single in DO-35 (DO-204AH)
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled
attenuators
HF
resistance
in
adjustable
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case:
DO-35 (DO-204AH)
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
BA479G
BA479S
TYPE
DIFFERENTIATION
V
R
= 30 V, z
r
> 5 k
V
R
= 30 V, z
r
> 9 k
ORDERING CODE
BA479G-TR or BA479G-TAP
BA479S-TR or BA479S-TAP
TYPE MARKING
BA479G
BA479S
CIRCUIT
CONFIGURATION
Single
Single
REMARKS
Tape and reel/ammopack
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
Reverse voltage
Forward continuous current
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
350
125
-55 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
TEST CONDITION
I
F
= 20 mA
V
R
= 30 V
f = 100 MHz, V
R
= 0 V
f = 100 MHz, I
F
= 1.5 mA
f = 100 MHz, V
R
= 0 V
I
F
= 10 mA, I
R
= 10 mA
BA479G
BA479S
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
z
r
5
9
4
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Rev. 1.9, 27-Apr-17
Document Number: 85527
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BA479G, BA479S
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
100
Vishay Semiconductors
a - Typical Cross Modulation Distortion (dB)
20
Π
- Circuit
with
10 dB Attenuation
V
0
= 40 dBmV
f
1
= 100 MHz
unmodulated
- 20
I
F
- Forward Current (mA)
10
0
T
amb
= 25 °C
1
- 40
- 60
- 80
0
20
40
60
80
f
2
, modulated
with
200 kHz, m = 100 % (MHz)
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
V
F
- Forward
Voltage
(V)
95 9733
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f
2
r
f
- Differential Forward Resistance (Ω)
10 000
1000
100
f > 20 MHz
T
j
= 25 °C
10
1
0.001
0.01
0.1
1
10
95 9734
I
F
- Forward Current (mA)
Fig. 2 -
Differential Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35 (DO-204AH)
Cathode Identification
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
1.7 [0.067]
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.9, 27-Apr-17
Document Number: 85527
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.3 [0.050]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000