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BAP51-02-TP

Description
PIN Diodes 715mW 50mA, 1.1V
CategoryDiscrete semiconductor    diode   
File Size384KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BAP51-02-TP Overview

PIN Diodes 715mW 50mA, 1.1V

BAP51-02-TP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Maximum diode capacitance0.55 pF
Diode component materialsSILICON
Maximum diode forward resistance2.5 Ω
Diode typePIN DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.715 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAP51-02
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Low diode capacitance
Low diode forward resistance
MARKING: A5
General
Purpose Pin Diodes
715mW
Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Continuous Reverse Voltage
Forward Current
Power Dissipation(T
A
=90
o
C)
Junction and Storage temperature
Symbol
V
R
I
F
P
D
T
j,
P
stg
Limits
60
50
715
-65~+150
Unit
V
mA
mW
C
SOD523
A
B
Thermal Resistance Junction to
solder point
E
G
R
thJs
85
K/W
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Min.
50
Continuous reverse
V
R
voltage
V
F
Forward voltage
Reverse current
I
R
C
d1
C
d2
C
d3
r
D
Diode forward resistance
Parameter
D
Max.
Unit
V
V
nA
pF
Conditions
I
R
=10µA
I
F
=50mA
V
R
=50V
V
R
=0V,f=1MHz
F
H
1.1
100
Diode capacitance
0.4
(Typ)
0.55
0.35
9
pF
pF
V
R
=1V,f=1MHz
V
R
=5V,f=1MHz
I
F
=0.5mA, f=100MHz
r
D
r
D
6.5
2.5
I
F
=1mA , f=100MHz
I
F
=10mA , f=100MHz
DIM
A
B
C
D
E
F
G
H
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.059
.067
1.50
1.70
.043
.051
1.10
1.30
.030
.033
0.75
0.85
.001
.003
0.01
0.07
.010
.014
0.25
0.35
.003
.006
0.08
0.15
.020
.028
0.50
0.70
.020
.031
0.51
0.77
NOTE
Revision:
B
www.mccsemi.com
1
of
3
2012/04/11

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