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NGTB20N135IHRWG

Description
IGBT Transistors 1350V/20A IGBT FSII TO-24
Categorysemiconductor    Discrete semiconductor   
File Size134KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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IGBT Transistors 1350V/20A IGBT FSII TO-24

NGTB20N135IHRWG Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryIGBT Transistors
RoHSDetails
TechnologySi
Package / CaseTO-247
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1350 V
Collector-Emitter Saturation Voltage2.2 V
Maximum Gate Emitter Voltage25 V
Continuous Collector Current at 25 C40 A
Pd - Power Dissipation394 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingTube
Gate-Emitter Leakage Current100 nA
Factory Pack Quantity30
Unit Weight0.229281 oz
NGTB20N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
www.onsemi.com
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are Pb−Free Devices
20 A, 1350 V
V
CEsat
= 2.20 V
E
off
= 0.60 mJ
C
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Pulsed collector current, T
pulse
limited by T
Jmax
, 10
ms
Pulse,
V
GE
= 15 V
Diode forward current
@ T
C
= 25°C
@ T
C
= 100°C
Diode pulsed current, T
pulse
limited
by T
Jmax
, 10
ms
Pulse, V
GE
= 0 V
Gate−emitter voltage
Transient Gate−emitter Voltage
(T
pulse
= 5
ms,
D < 0.10)
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Symbol
V
CES
I
C
40
20
I
CM
120
A
Value
1350
Unit
V
A
G
C
E
G
E
TO−247
CASE 340AL
I
F
40
20
I
FM
V
GE
120
$20
±25
A
MARKING DIAGRAM
A
V
20N135IHR
AYWWG
P
D
394
197
T
J
T
stg
T
SLD
−40 to +175
−55 to +175
260
W
°C
°C
°C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB20N135IHRWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
©
Semiconductor Components Industries, LLC, 2017
1
March, 2017 − Rev. 1
Publication Order Number:
NGTB20N135IHR/D
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