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BLA6H0912-500,112

Description
RF MOSFET Transistors TRANS RADAR PWR LDMOS
CategoryDiscrete semiconductor    The transistor   
File Size920KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLA6H0912-500,112 Overview

RF MOSFET Transistors TRANS RADAR PWR LDMOS

BLA6H0912-500,112 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeDFM
package instructionROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts2
Manufacturer packaging codeSOT634A
Reach Compliance Codecompliant
BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 05 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 128
s;
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(MHz)
960 to 1200
V
DS
(V)
50
P
L
(W)
450
G
p
(dB)
17
D
(%)
50
t
r
(ns)
20
t
f
(ns)
6
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an I
Dq
of 100 mA, a t
p
of 128
s
with
of 10 %:
Output power = 450 W
Power gain = 17 dB
Efficiency = 50 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (960 MHz to 1215 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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