NOT RECOMMENDED FOR NEW DESIGN
USE DMC3025LSD
DMC3036LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
N-CH
P-CH
V
(BR)DSS
30V
-30V
R
DS(ON) max
36mΩ @ V
GS
= 10V
61mΩ @ V
GS
= 4.5V
36mΩ @ V
GS
= -10V
64mΩ @ V
GS
= -4.5V
Package
I
D
T
A
= +25°C
6.9A
5.1A
-6.0A
-5.0
Features
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SO-8
Description
This MOSFET has been designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.072g (approximate)
Applications
•
•
•
•
Motor control
Power Management Functions
DC-DC Converters
Inverter
SO-8
S2
G2
S1
G1
D2
D2
D1
D1
D
2
D
1
G
2
G
1
Top View
Top View
Internal Schematic
S
2
N-Channel MOSFET
S
1
P-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC3036LSD-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
( Top View )
8
5
Logo
C3036LD
YY WW
Part no.
1
4
Xth week: 01~52
Year : "07" =2007
"08" =2008
DMC3036LSD
Document number: DS31311 Rev. 7 - 3
1 of 8
www.diodes.com
December 2012
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMC3025LSD
DMC3036LSD
Maximum Ratings N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Value
30
±20
5.0
4.0
6.9
5.8
2
24
Units
V
V
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= 10V
Maximum Ratings P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Value
-30
±20
-4.5
-3.5
-6
-5
-2
-21
Units
V
V
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= -10V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Notes:
Symbol
Steady State
t<10s
Steady State
t<10s
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
1.5
2.5
83
49
15
-55 to 150
Units
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMC3036LSD
Document number: DS31311 Rev. 7 - 3
2 of 8
www.diodes.com
December 2012
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMC3025LSD
DMC3036LSD
Electrical Characteristics N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
Min
30
⎯
⎯
1
⎯
⎯
⎯
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
28
51
7.7
⎯
431
55
48
1.3
3.8
7.9
Max
⎯
1
±
100
2.1
36
61
⎯
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 6.9A
V
GS
= 4.5V, I
D
= 5.0A
V
DS
= 5V, I
D
= 6.9A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V, f = 1.0MHz
V
GS
= 0V V
DS
= 0V, f = 1MHz
V
DS
= 10V, V
GS
= 4.5V, I
D
= 10A
V
DS
= 10V, V
GS
= 10V, I
D
= 10A
V
DS
= 10V, V
GS
= 10V, I
D
= 10A
V
DS
= 10V, V
GS
= 10V, I
D
= 10A
1.4
1.7
nC
Electrical Characteristics P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
Min
-30
⎯
⎯
-1
⎯
⎯
⎯
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
30
53
8.8
⎯
977
129
116
13.1
10.1
21.1
2.8
3.2
Max
⎯
-1.0
±
100
-2.2
36
64
⎯
-1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -5A
V
DS
=-5V, I
D
= -6A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V, f = 1.0MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
V
DS
= 15V, V
GS
= -4.5V, I
D
= 6A
V
DS
= 15V, V
GS
= -10V, I
D
= 6A
V
DS
= 15V, V
GS
= -10V, I
D
= 6A
V
DS
= 15V, V
GS
= -10V, I
D
= 6A
nC
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC3036LSD
Document number: DS31311 Rev. 7 - 3
3 of 8
www.diodes.com
December 2012
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMC3025LSD
DMC3036LSD
N-CHANNEL
30
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
30
25
I
D
, DRAIN CURRENT (A)
25
I
D
, DRAIN CURRENT (A)
V
DS
= 5.0V
20
V
GS
= 3.5V
20
15
V
GS
= 3.3V
15
10
V
GS
= 3.0V
10
T
A
= 125°C
5
V
GS
= 2.5V
5
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 3.3V
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
4
6
8 10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2
I
D
= 5.0A
1.6
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
V
GS
= 4.5V
I
D
= 5A
2.0
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= 10V
I
D
= 10A
1.6
1.2
1.2
I
D
= 250µA
1.0
0.8
0.8
0.4
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 Gate Threshold Variation vs. Ambient Temperature
0
-50
DMC3036LSD
Document number: DS31311 Rev. 7 - 3
4 of 8
www.diodes.com
December 2012
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE DMC3025LSD
DMC3036LSD
1,000
C
T
, JUNCTION CAPACITANCE (pF)
10
V
GS
GATE THRESHOLD VOLTAGE (V)
C
iss
8
V
DS
= 3.3V
I
D
= 10A
6
100
C
oss
C
rss
4
2
f = 1MHz
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 7 Typical Junction Capacitance
30
0
0
1
2
3
4
5
6
7
8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8 Gate Charge
9
10
DMC3036LSD
Document number: DS31311 Rev. 7 - 3
5 of 8
www.diodes.com
December 2012
© Diodes Incorporated
Analogue and Mixed Signal
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