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2N4402TAR

Description
Bipolar Transistors - BJT PNP Transistor General Purpose
Categorysemiconductor    Discrete semiconductor   
File Size181KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2N4402TAR Overview

Bipolar Transistors - BJT PNP Transistor General Purpose

2N4402TAR Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3 Kinked Lead
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO40 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.75 V
Maximum DC Collector Current0.6 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max150
Height5.33 mm
Length5.2 mm
PackagingAmmo Pack
Width4.19 mm
Continuous Collector Current0.6 A
DC Collector/Base Gain hfe Min50
Pd - Power Dissipation625 mW
Factory Pack Quantity2000
Unit Weight0.008466 oz
Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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Description Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT Bipolar Transistors - BJT PNP Transistor General Purpose
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details Details N Details N Details
Mounting Style Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-92-3 Kinked Lead TO-92-3 TO-92-3 Kinked Lead TO-92-3 TO-92-3 TO-92-3 TO-92-3 Kinked Lead
Transistor Polarity PNP PNP PNP PNP PNP PNP PNP
Configuration Single Single Single Single Single Single Single
Collector- Emitter Voltage VCEO Max 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Collector- Base Voltage VCBO 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Emitter- Base Voltage VEBO 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Maximum DC Collector Current 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
Minimum Operating Temperature - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
Height 5.33 mm 4.58 mm 5.33 mm 4.7 mm 4.7 mm 5.33 mm 4.7 mm
Length 5.2 mm 4.58 mm 5.2 mm 4.7 mm 4.7 mm 5.2 mm 4.7 mm
Width 4.19 mm 3.86 mm 4.19 mm 3.93 mm 3.93 mm 4.19 mm 3.93 mm
DC Collector/Base Gain hfe Min 50 50 50 30 50 30 50
Pd - Power Dissipation 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW
Unit Weight 0.008466 oz 0.008466 oz 0.006286 oz 0.008466 oz 0.006314 oz 0.008466 oz 0.008466 oz
Collector-Emitter Saturation Voltage 0.75 V 0.75 V 0.75 V - 0.75 V - 0.75 V
DC Current Gain hFE Max 150 150 150 - 150 - 150
Packaging Ammo Pack Bulk Ammo Pack Reel Bulk - Reel
Continuous Collector Current 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A - 0.6 A
Factory Pack Quantity 2000 3000 2000 2000 1000 - 2000
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