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BSO040N03MSGXUMA1

Description
MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M
CategoryDiscrete semiconductor    The transistor   
File Size309KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSO040N03MSGXUMA1 Overview

MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M

BSO040N03MSGXUMA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionGREEN, PLASTIC PACKAGE-8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSO040N03MS G
OptiMOS
3 M-Series Power-MOSFET
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
4
4.9
20
A
V
mΩ
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-DSO-8
Type
BSO040N03MS G
Package
PG-DSO-8
Marking
040N03MS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
10 secs
Continuous drain current
1)
I
D
V
GS
=10 V,
T
A
=25 °C
V
GS
=10 V,
T
A
=90 °C
V
GS
=4.5 V,
T
A
=25 °C
V
GS
=4.5 V,
T
A
=90 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
2.5
T
A
=25 °C
T
A
=25 °C
I
D
=20 A,
R
GS
=25
20
13.9
18
12.6
140
20
150
±20
1.56
-55 ... 150
55/150/56
mJ
V
W
°C
Value
steady state
16
11
14
9.9
A
Unit
Rev.1.1
page 1
2009-11-19
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