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BSO119N03S

Description
MOSFET N-Ch 30V 9A DSO-8
CategoryDiscrete semiconductor    The transistor   
File Size626KB,18 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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MOSFET N-Ch 30V 9A DSO-8

BSO119N03S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.0119 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)93 pF
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.56 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
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Index Files: 159  822  1321  1619  1111  4  17  27  33  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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