SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere
FEATURES
*
*
*
*
*
Glass passivated device
For surface mounted applications
Ultrafast recovery times dor high efficiency
Low forward voltage, low power loss
Low leakage current
05U1L
THRU
05U4L
SOD-123FL
.114 (2.9)
.106 (2.7)
.077 (1.95)
.069 (1.75)
MECHANICAL DATA
*
*
*
*
Epoxy: Device has UL flammability classification 94V-O
Metallurgically bonded construction
Mounting position: Any
Weight: 0.016 gram
.035 (0.90)
.028 (0.70)
.008 (0.20)
.039 (1.00)
.035 (0.90)
.150 (3.8)
.142 (3.6)
.052 (1.32)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Resistive or inductive load.
.033 (0.85)
.030 (0.75)
.044 (1.12)
.043 (1.08)
.050 (1.28)
.033 (0.85)
.030 (0.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 55
O
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Current Square Time
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
T
R
θ
JA
R
θ
JL
C
J
T
J
T
STG
05U1L
05U2L
05U3L
05U4L
UNITS
Volts
Volts
Volts
Amps
Amps
A
2
S
C/W
C/W
pF
0
0
50
35
50
100
70
100
0.5
15
0.9
120
20
18
150
-55 to + 150
150
105
150
200
140
200
0
0
C
C
ELECTRICAL CHARACTERISTICS
(@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
o
@T
A
= 25 C
SYMBOL
V
F
o
05U1L
05U2L
05U3L
05U4L
UNITS
Volts
μA
μA
nSec
2009-09
REV: A
0.95
5
350
20
@T
A
= 100 C
I
R
trr
Maximum Reverse Recovery Time (Note 4)
NOTES : 1.
2.
3.
4.
Thermal Resistance :Mounted on PCB.
Measured at 1 MHz and applied reverse voltage of 4.0 volts.
"Fully ROHS compliant","100% Sn plating (Pb-free)".
Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A.
RATING AND CHARACTERISTICS CURVES ( 05U1L THRU 05U4L )
trr
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
(-)
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR 50/100 ns/cm
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
0.5
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, ( A)
1000
T
A
= 100
O
C
0.4
0.3
0.2
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
100
10
T
A
= 75
O
C
0.1
0
0
1.0
O
T
A
= 25 C
25
50
75
100
125
O
150
175
0.1
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE, ( C)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.2 TYPICAL FORWARD CURRENT
T
DERATING CURVE
FIG.3 TYPICAL REVERSE
CHARACTERISTICS
RATING AND CHARACTERISTICS CURVES ( 05U1L THRU 05U4L )
INSTANTANEOUS FORWARD CURRENT, (A)
20
10
T
J
= 25 C
O
PEAK FORWARD SURGE CURRENT, (A)
20
8.3ms Single Half Sine-Wave
(JEDED Method)
10
3.0
1.0
0.3
0.1
0.03
0.01
0
0.5
1.0
1.5
Pulse Width=300uS
1% Duty Cycle
5
3
2
2.0
2.5
3.0
3.5
1
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
FIG.4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
200
JUNCTION CAPACITANCE, (pF)
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
60
40
20
10
6
4
2
1
0.1 0.2
0.4
1.0
2
4
10
T
J
= 25
O
C
20
40
100
REVERSE VOLTAGE, (V)
FIG.6 TYPICAL JUNCTION CAPACITANCE
MCU
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