DGS 15-018CS
DGSK 32-018CS
Gallium Arsenide Schottky Rectifier
Second generation
V
RRM
= 180 V
I
DC
= 24 A
C
Junction
= 21 pF
Type
DGS 15-018CS
Marking on product
15A180AS
Single
Circuit
A
C
Package
TO-252 AA
A
A
TAB
DGSK 32-018CS
DGSK 32-018CS
Common cathode
A
C
A
TO-263 AB
A
A
TAB
A = Anode, TAB = Cathode
Diode
Symbol
V
RRM/RSM
I
FAV
I
FAV
I
FSM
P
tot
Symbol
V
F
I
R
I
RM
t
rr
C
J
R
thJC
Data according to IEC 60747 and per diode unless otherwise specified
Features
Conditions
Maximum Ratings
180
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
C
= 25°C
Conditions
I
F
= 7.5 A;
I
F
= 7.5 A;
V
R
= V
RRM
;
V
R
= V
RRM
;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
24
15
80
34
V
A
A
A
W
Characteristic Values
min. typ. max.
1.25
1.0
0.25
1.1
23
21
1.5
V
V
0.25 mA
mA
A
ns
pF
4.4 K/W
GaAs Schottky Diode with Enhanced
Barrier Height:
•
lowest operating forward voltage drop due
to additional injection of minority carriers
•
high switching speed
- low junction capacity of GaAs diode
independent from temperature
- short and low reverse recovery current
peak due to short lifetime of minority
carriers
- soft turn off
Surface Mount Packages:
•
Incorporating Single and Dual Diode
Topologies
•
Industry Standard Package Outlines
•
Epoxy meets UL 94V-0
Applications
I
F
= 5 A;
-di
F
/dt = 150 A/µs;
V
R
= 100 V; T
VJ
= 125°C
V
R
= 100 V; T
VJ
= 125°C
Component
Symbol
T
VJ
T
stg
Symbol
Weight
Conditions
TO-252
TO-263
Conditions
Maximum Ratings
-55...+175
-55...+150
°C
°C
Switched Mode Power Supplies:
•
AC-DC converters
•
DC-DC converters
with:
•
high switching frequency
•
high efficiency
•
low EMI
for use e. g. in:
•
telecom
•
computer
•
automotive equipment
Characteristic Values
min. typ. max.
0.3
2
g
g
0520
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
DGS 15-018CS
DGSK 32-018CS
40
10
C
J
I
F
A
1
T
VJ
=
125°C
25°C
300
pF
Outlines TO-252 AA
100
0.1
1 Anode
2 NC
3 Anode
4 Cathode
T
VJ
= 125°C
0.01
0.0
0.5
1.0
V
F
V 1.5
10
0.1
Dim.
1
10
100 V 1000
V
R
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
TO-252
K/W
1
Z
thJC
Single Pulse
TO-263
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19
2.38
0.89
1.14
0
0.13
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
4.32
5.21
6.35
6.73
4.32
5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51
1.02
0.64
1.02
0.89
1.27
2.54
2.92
Inches
Min.
Max.
0.086
0.094
0.035
0.045
0
0.005
0.025
0.035
0.030
0.045
0.205
0.215
0.018
0.023
0.018
0.023
0.235
0.245
0.170
0.205
0.250
0.265
0.170
0.205
0.090 BSC
0.180 BSC
0.370
0.410
0.020
0.040
0.025
0.040
0.035
0.050
0.100
0.115
0.1
Outlines TO-263 AB
0.01
DGS15-018CS
0.00001
0.0001
0.001
0.01
0.1
1
t
s
10
Fig. 3 typ. thermal impedance junction to case
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
0520
.029
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
2-2
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