KSD1621 — NPN Epitaxial Silicon Transistor
August 2009
KSD1621
NPN Epitaxial Silicon Transistor
Features
• High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
Marking
1 6
P Y
1
2 1
W W
Weekly code
Year code
h
FE
grade
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
T
A
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
A
= 25°C)
Derating Rate above 25°C
Junction Temperature
Storage Temperature
Ratings
30
25
6
2
500
4
150
-55 to +150
Units
V
V
V
A
mW
mW/°C
°C
°C
Mounted on Ceramic Board (250mm
2
x 0.8mm)
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
1
www.fairchildsemi.com
KSD1621 — NPN Epitaxial Silicon Transistor
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 10μA, I
E
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
BE
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 75mA
I
C
= 1.5A, I
B
= 75mA
V
CE
= 10V, I
C
= 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CC
= 12V, V
BE
= 5V
I
B1
= -I
B2
= 25mA
I
C
= 0.5A, R
L
= 25Ω
Min.
30
25
6
Typ.
Max.
Units
V
V
V
Collector-Emitter Breakdown Voltage I
C
= 1mA, I
B
= 0
100
100
100
65
0.18
0.85
150
19
60
500
25
560
0.4
1.2
nA
nA
V
CE
(sat) Collector-Emitter Saturation Voltage
V
BE
(sat) Base-Emitter Saturation Voltage
f
T
C
ob
t
ON
t
STG
t
F
Current Gain Bandwidth product
Output Capacitance
Turn On Time *
Storage Time *
Fall Time *
V
V
MHz
pF
ns
ns
ns
h
FE
Classification
Classification
h
FE
R
100 ~ 200
S
140 ~ 280
T
200 ~ 400
U
280 ~ 560
Package Marking and Ordering Information
Device
KSD1621RTF
KSD1621STF
KSD1621TTF
KSD1621UTF
Device Marking
Line 1: 1621
Line 2: R&3
Line 1: 1621
Line 2: S&3
Line 1: 1621
Line 2: T&3
Line 1: 1621
Line 2: U&3
Package
SOT-89
SOT-89
SOT-89
SOT-89
Reel Size
13”
13”
13”
13”
Tape Width
--
--
--
--
Quantity
4,000
4,000
4,000
4,000
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
2
www.fairchildsemi.com
KSD1621 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
2.0
Figure 2. DC Current Gain
1000
I
B
= 50mA
I
B
= 30mA
I
B
= 20mA
V
CE
= 2V
I
C
[A], COLLECTOR CURRENT
1.6
h
FE
, DC CURRENT GAIN
I
B
= 10mA
1.2
100
I
B
= 8mA
I
B
= 6mA
0.8
I
B
= 4mA
0.4
10
I
B
= 2mA
I
B
= 0
0.2
0.4
0.6
0.8
1.0
0.0
0.0
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
Figure 4. Base-Emitter On Voltage
3.2
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
= 10 I
B
V
CE
= 2V
2.8
I
C
[A], COLLECTOR CURRENT
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.0
1
0.1
0.01
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
1000
Figure 6. Current Gain Bandwidth Product
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
I
E
=0
f = 1MHz
V
CE
= 10V
C
ob
[pF], CAPACITANCE
100
100
10
1
0.1
1
10
100
10
0.1
1
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
3
www.fairchildsemi.com
KSD1621 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 7. Safe Operating Area
10
(Continued)
Figure 8. Power Derating
0.8
I
C
MAX. (Pulse)
I
C
MAX. (DC)
10
m
I
C
[A], COLLECTOR CURRENT
1
P
C
[W], POWER DISSIPATION
s
1m
s
0m
10
s
0.4
No
He
at
Si
nk
0.1
T
a
=25 C
Single Pulse
Mounted on Ceramic Board
2
(250mm ? .8mm)
o
0.01
0.1
1
10
100
0.0
0
50
o
100
150
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
4
www.fairchildsemi.com
KSD1621 — NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
4.50
±0.20
1.65
±0.10
C0.2
(0.50)
1.50
±0.20
(0.40)
±0.20
2.50
0.50
±0.10
1.50 TYP 1.50 TYP
0.40
±0.10
0.40
+0.10
–0.05
(1.10)
4.10
±0.20
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
5
www.fairchildsemi.com
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