®
BAT46
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metalto silicon diode featuring
high breakdown voltage low turn-on voltage.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 10s at 4mm from
Case
T
a
= 25°C
t
p
≤
1s
δ ≤
0.5
t
p
=
10ms
T
I
= 80°C
DO-35
Value
100
150
350
750
150
- 65 to + 150
- 65 to + 125
230
Unit
V
mA
mA
mA
mW
°C
°C
THERMAL RESISTANCE
Symbol
R
th(j-a)
Junction-ambient*
* On infinite heatsink with 4mm lead length.
Test Conditions
Value
300
Unit
°C/W
October 2001 - Ed: 2B
1/4
BAT46
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
*
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
I
R
*
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
V
R
= 75V
V
R
= 50V
Test Conditions
Min.
Typ.
Max.
Unit
V
0.25
0.45
1
0.5
5
µA
V
I
R
= 100µA
I
F
= 0.1mA
I
F
= 10mA
I
F
= 250mA
V
R
= 1.5V
V
R
= 10V
100
0.8
7.5
2
15
5
20
DYNAMIC CHARACTERISTICS
Symbol
C
T
j
= 25°C
T
j
= 25°C
Test Conditions
V
R
= 0V
V
R
= 1V
Min.
Typ.
10
6
Max.
Unit
pF
f = 1Mhz
* Pulse test: t
p
≤
300µs
δ <
2%.
2/4
BAT46
Fig. 1-1:
Forward voltage drop versus forward cur-
rent (low level, typical values)
Fig. 1-2:
Forward voltage drop versus forward cur-
rent (high level, typical values)
IFM(mA)
20
18
16
14
12
10
8
6
4
2
0
0.0
0.1
IFM(A)
5E-1
Tj=125°C
Tj=25°C
Tj=125°C
1E-1
Tj=25°C
VFM(V)
0.2
0.3
0.4
0.5
0.6
VFM(V)
1E-2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 2:
Leakage current versus reverse voltage ap-
plied (typical values)
Fig. 3:
Leakage current versus junction temperature
(typical values)
1E+3
1E+2
1E+1
IR(µA)
Tj=125°C
IR(µA)
1E+3
Tj=100°C
VR=75V
1E+2
1E+1
Tj=75°C
Tj=50°C
1E+0
1E-1
Tj=25°C
1E+0
VR(V)
Tj(°C)
80
90 100
0
10
20
30
40
50
60
70
1E-1
0
25
50
75
100
125
Fig. 4:
Junction capacitance versus reverse volt-
age applied (typical values)
C(pF)
10
F=1MHz
Tj=25°C
5
2
VR(V)
1
10
100
1
3/4
BAT46
PACKAGE MECHANICAL DATA
DO-35
REF.
C
A
C
DIMENSIONS
Millimeters
Min.
Max.
4.50
2.00
O
B
/
Inches
Min.
0.120
0.060
1.102
Max.
0.177
0.079
A
B
O
D
/
O
D
/
3.05
1.53
28.00
0.458
C
D
0.558
0.018
0.022
s
s
s
Cooling method: by convection and conduction
Marking: clear, ring at cathode end
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
京公网安备 11010802033920号
EEWORLD
