FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
March 2015
FDD8778/FDU8778
N-Channel PowerTrench
®
MOSFET
25V, 35A, 14mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Max r
DS(on)
=
14.0mΩ at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
21.0mΩ at V
GS
= 4.5V, I
D
= 33A
Low gate charge: Q
g(TOT)
= 12.6nC(Typ), V
GS
= 10V
Low gate resistance
RoHS compliant
LE
A
REE
I
DF
Application
DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G D S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 1)
(Note 2)
Parameter
Ratings
25
±20
35
40
145
24
39
-55 to 175
mJ
W
°C
A
Units
V
V
M
E
N
TA
TIO
L
E
N
MP
D
G
D
I-PAK
(TO-251AA)
S
Short Lead I-PAK
G
S
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
3.8
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8778
FDU8778
FDU8778
Device
FDD8778
FDU8778
FDU8778_F071
Package
TO-252AA
TO-251AA
TO-251AA
1
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Tape Width
16mm
N/A
N/A
Quantity
2500 units
75 units
75 units
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©2006 Fairchild Semiconductor Corporation
FDD8778/FDU8778 Rev. 1.2
FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
I
D
= 250µA, referenced to
25°C
V
DS
= 20V,
V
GS
= 0V
V
GS
= ±20V
T
J
= 150°C
25
17.2
1
250
±10
V
mV/°C
µA
µA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250µA
I
D
= 250µA, referenced to
25°C
V
GS
= 10V, I
D
= 35A
Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 33A
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
1.2
1.5
-5.3
11.6
15.7
18.2
14.0
21.0
23.8
mΩ
2.5
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
f = 1MHz
635
160
108
1.3
845
215
162
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 27Ω
6
22
43
32
12.6
6.7
2.1
3.2
12
35
69
51
18
9.4
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/µs
I
F
= 35A, di/dt = 100A/µs
1.03
0.89
25
17
1.25
1.2
38
26
V
ns
nC
Notes:
1:
Pulse time < 300µs, Duty cycle = 2%.
2:
Starting T
J
= 25
o
C, L = 0.1mH, I
AS
= 22A ,V
DD
= 23V, V
GS
= 10V.
FDD8778/FDU8778 Rev. 1.2
2
www.fairchildsemi.com
FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
70
60
I
D
, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 4.0V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 10V
V
GS
= 5V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 3.0V
V
GS
= 3.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
50
40
30
20
10
0
0.0
0.5
1.0
1.5
V
GS
= 3V
2.0
2.5
3.0
3.5
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
I
D
, DRAIN CURRENT(A)
60
70
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
50
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 35A
V
GS
= 10V
I
D
= 35A
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
40
30
T
J
= 175
o
C
20
10
0
3.0
T
J
= 25
o
C
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
4.5
6.0
7.5
9.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction
Temperature
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
1.0
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= - 55
o
C
V
DD
= 5V
Figure 4. On-Resistance vs Gate to Source
Voltage
100
I
S
, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
10
1
0.1
0.01
1E-3
0.0
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDD8778/FDU8778 Rev. 1.2
FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
, GATE TO SOURCE VOLTAGE(V)
10
8
CAPACITANCE (pF)
2000
1000
C
iss
f = 1MHz
V
GS
= 0V
6
4
2
0
V
DD
= 10V
V
DD
= 13V
C
oss
V
DD
= 16V
C
rss
100
0
3
6
9
Q
g
, GATE CHARGE(nC)
12
15
40
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
50
Figure 8. Capacitance vs Drain to Source Voltage
50
I
D
, DRAIN CURRENT (A)
40
V
GS
=10V
I
AS
, AVALANCHE CURRENT
(
A
)
10
T
J
= 25
o
C
30
20
V
GS
=4.5V
T
J
= 125
o
C
T
J
= 150
o
C
10
R
θ
JC
= 3.8 C/W
o
1
1E-3
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE(ms)
100
0
25
50
75
100
125
o
150
175
T
C
, CASE TEMPERATURE
(
C
)
Figure 9. Unclamped Inductive Switching
Capability
400
100
I
D
, DRAIN CURRENT (A)
10us
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
P
(
PK
)
, PEAK TRANSIENT POWER (W)
5000
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175
–
T
C
----------------------
-
150
1000
100us
10
LIMITED BY
PACKAGE
100
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25
O
C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
DC
SINGLE PULSE
0.1
1
10
-5
10
10
-4
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
50
10
10
10
t, PULSE WIDTH (s)
-3
-2
-1
10
0
10
1
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8778/FDU8778 Rev. 1.2
4
www.fairchildsemi.com
FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
0.01
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD8778/FDU8778 Rev. 1.2
5
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