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FDU8778

Description
MOSFET N-CH 25V 35A I-PAK
CategoryDiscrete semiconductor    The transistor   
File Size548KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDU8778 Overview

MOSFET N-CH 25V 35A I-PAK

FDU8778 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionIPAK-3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)24 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)162 pF
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)39 W
Maximum pulsed drain current (IDM)145 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)120 ns
Maximum opening time (tons)47 ns
Base Number Matches1
FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
March 2015
FDD8778/FDU8778
N-Channel PowerTrench
®
MOSFET
25V, 35A, 14mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Max r
DS(on)
=
14.0mΩ at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
21.0mΩ at V
GS
= 4.5V, I
D
= 33A
Low gate charge: Q
g(TOT)
= 12.6nC(Typ), V
GS
= 10V
Low gate resistance
RoHS compliant
LE
A
REE
I
DF
Application
DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G D S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 1)
(Note 2)
Parameter
Ratings
25
±20
35
40
145
24
39
-55 to 175
mJ
W
°C
A
Units
V
V
M
E
N
TA
TIO
L
E
N
MP
D
G
D
I-PAK
(TO-251AA)
S
Short Lead I-PAK
G
S
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
3.8
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8778
FDU8778
FDU8778
Device
FDD8778
FDU8778
FDU8778_F071
Package
TO-252AA
TO-251AA
TO-251AA
1
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Tape Width
16mm
N/A
N/A
Quantity
2500 units
75 units
75 units
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDD8778/FDU8778 Rev. 1.2

FDU8778 Related Products

FDU8778 FDD8778
Description MOSFET N-CH 25V 35A I-PAK MOSFET 25V N-Channel PowerTrench MOSFET
Maker ON Semiconductor ON Semiconductor
package instruction IPAK-3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 24 mJ 24 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (Abs) (ID) 40 A 35 A
Maximum drain current (ID) 35 A 35 A
Maximum drain-source on-resistance 0.014 Ω 0.014 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 39 W 39 W
Maximum pulsed drain current (IDM) 145 A 145 A
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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