PTFC260202FC
Thermally-Enhanced High Power RF LDMOS FET
25 W, 28 V, 2495 – 2690 MHz
Description
The PTFC260202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2495 to 2690 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC260202FC
Package H-37248-4
Features
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
• roadband input matching
B
• Typical CW performance, 2620 MHz, 28 V
- Output power at P
1dB
= 25 W
- Efficiency = 57%
- Linear Gain = 19.4 dB
Drain Efficiency (%)
• Capable of handling 10:1 VSWR @28 V, 25 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
20
19
50
40
Gain (dB)
18
17
16
15
Gain
Efficiency
30
20
10
0
30
31
32
33
34
35
36
37
38
39
40
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 170 mA, P
OUT
= 5 W avg, ƒ
1
= 2615 MHz, ƒ
2
= 2625 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
19
27.5
—
Typ
20
30
–31.5
Max
—
—
–30
Unit
dB
%
dBc
h
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.3, 2016-06-21
PTFC260202FC
DC Characteristics
(single side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
=
1.35 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1
10
—
3.3
1
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 25 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
2.2
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC260202FC V1 R0
PTFC260202FC V1 R250
Order Code
PTFC260202FCV1R0XTMA1
PTFC260202FCV1R250XTMA1
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 03.3, 2016-06-21
PTFC260202FC
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
2690 Upper
2690 Lower
2496 Upper
2496 Lower
-30
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
30
31
32
33
34
35
36
IMD Low
IMD Up
ACPR
Efficiency
45
40
30
25
20
15
10
5
40
0
35
-20
IMD & ACPR (dBc)
Drain Efficiency (%)
-25
IMD (dBc)
-35
Output Power (dBm)
37
38
39
-40
30 31 32 33 34 35 36 37 38 39 40
Output Power (dBm)
Single-carrier WCDMA 3GGP Broadband
V
DD
= 28 V, I
DQ
= 0.17 A, P
OUT
= 4 W,
PAR = 10 dB
Gain
Efficiency
IRL
ACPR
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz
40
0
21
70
Gain (dB) / Efficiency (%)
IMD (dBc) / ACPR (dBc)
35
30
25
20
15
10
5
0
2480
2520
2560
2600
-5
-10
-15
-20
-25
-30
-35
20
19
50
40
18
17
16
15
14
35
36
37
38
39
40
41
42
43
44
45
Efficiency
30
20
10
0
2640
2680
-40
2720
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 03.3, 2016-06-21
Drain Efficiency (%)
Gain
60
Gain (dB)
MCU
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