BC859CLT1G datasheet, PDF - EEWORLD Datasheet

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BC859CLT1G: DescriptionBipolar Transistors - BJT 100mA 30V PNP; CategoryDiscrete semiconductor The transistor; File Size125KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Bipolar Transistors - BJT 100mA 30V PNP

BC859CLT1G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
Parts packaging code	SOT-23
package instruction	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Contacts	3
Manufacturer packaging code	318-08
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC856ALT1G Series,

SBC856ALT1G Series

General Purpose

Transistors

PNP Silicon

Features

http://onsemi.com

•

S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

BASE

COLLECTOR

EMITTER

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

Collector-Base Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

Emitter−Base Voltage

Collector Current

−

Continuous

Collector Current

−

Peak

Symbol

CEO

Value

−65

−45

−30

−80

−50

−30

−5.0

−100

−200

mAdc

Symbol

Max

225

1.8

556

Unit

mW/°C

°C/W

xx M

Unit

CBO

SOT−23 (TO−236AB)

CASE 318

STYLE 6

MARKING DIAGRAM

EBO

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR− 5 Board,

(Note 1) T

= 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation Alumina

Substrate, (Note 2) T

= 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature

= Device Code

xx = (Refer to page 6)

= Date Code*

= Pb−Free Package

qJA

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

300

2.4

417

−55

to +150

mW/°C

°C/W

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

qJA

, T

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

Semiconductor Components Industries, LLC, 2013

May, 2013

−

Rev. 13

Publication Order Number:

BC856ALT1/D

BC859CLT1G Related Products

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Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	CASE 318-08, TO-236, 3 PIN	CASE 318-08, TO-236, 3 PIN	CASE 318-08, TO-236, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	CASE 318-08, TO-236, 3 PIN	CASE 318-08, TO-236, 3 PIN
Contacts	3	3	3	3	3	3	3	3	3
Manufacturer packaging code	318-08	318-08	318-08	CASE 318-08	318-08	318-08	318-08	CASE 318-08	318-08
Reach Compliance Code	compliant	not_compliant	not_compliant	not_compliant	compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	30 V	65 V	30 V	30 V	45 V	65 V	65 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	420	420	125	220	220	220	220	125	220
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e0	e0	e0	e3	e0	e0	e0	e0
Humidity sensitivity level	1	1	1	1	1	1	1	1	1
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	240	240	240	260	240	240	240	240
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.225 W	0.3 W	0.3 W	0.225 W	0.225 W	0.225 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn/Pb)	Tin (Sn)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	30	30	30	40	30	30	30	30
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Brand Name	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	ON Semiconductor
Is it lead-free?	Lead free	Contains lead	Contains lead	-	Lead free	Contains lead	Contains lead	-	Contains lead

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