Type
BSC900N20NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
200
90
15.2
V
mΩ
A
PG-TDSON-8
Type
BSC900N20NS3 G
Package
PG-TDSON-8
Marking
900N20NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
15.2
10.7
61
100
10
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=7.6 A,
R
GS
=25
Ω
mJ
kV/µs
V
W
°C
T
C
=25 °C
62.5
-55 ... 150
55/150/56
J-STD20 and JESD22
see figure 3
Rev. 2.2
page 1
2011-05-20
BSC900N20NS3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
6 cm
2
cooling area
3)
-
-
-
-
2
50
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=30 µA
V
DS
=160 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=160 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=7.6 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=7.6 A
200
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
-
8
10
1
77
2.2
16
100
100
90
-
-
nA
mΩ
Ω
S
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 2.2
page 2
2011-05-20
BSC900N20NS3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
4)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=100 V,
V
GS
=10 V,
I
D
=7.6 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
-
-
-
-
-
-
-
690
52
5.2
5
4
10
3
920
69
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=100 V,
V
GS
=0 V
V
DD
=100 V,
I
D
=7.6 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
3.1
1.3
2.4
9
4.5
20
-
-
-
11.6
-
26
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=15.2 A,
T
j
=25 °C
V
R
=100 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
1
86
309
15.2
61
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2011-05-20
BSC900N20NS3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
70
16
60
14
12
50
10
P
tot
[W]
40
I
D
[A]
30
20
10
0
0
40
80
120
160
8
6
4
2
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
2
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10 µs
100 µs
10
1
1 ms
Z
thJC
[K/W]
I
D
[A]
10 ms
10
0
0.5
10
0
DC
0.2
0.1
0.05
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2011-05-20
BSC900N20NS3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
30
5.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
160
25
7V
10 V
6V
120
20
R
DS(on)
[m
Ω
]
5V
5.5 V
6V
I
D
[A]
5V
15
80
8V
10 V
10
4.5 V
40
5
0
0
1
2
3
4
5
0
0
4
8
12
16
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
40
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
32
35
28
30
24
25
20
20
g
fs
[S]
150 °C
25 °C
I
D
[A]
16
15
12
10
8
5
4
0
0
2
4
6
8
0
0
5
10
15
20
25
30
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2011-05-20
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