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BAW56M3T5G

Description
Diodes - General Purpose, Power, Switching 70V 200mA DUAL
CategoryDiscrete semiconductor    diode   
File Size112KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAW56M3T5G Overview

Diodes - General Purpose, Power, Switching 70V 200mA DUAL

BAW56M3T5G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT
package instructionSOT-723, CASE 631AA-01, 3 PIN
Contacts3
Manufacturer packaging code631AA
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time2 weeks
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.265 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAW56M3T5G
Dual Switching Diode
Common Anode
The BAW56M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
Features
http://onsemi.com
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
70 V
DUAL COMMON ANODE
SWITCHING DIODE
CATHODE
1
2
CATHODE
ANODE
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
265
2.1
R
qJA
P
D
470
640
5.1
R
qJA
T
J
, T
stg
195
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
3
SOT−723
CASE 631AA
STYLE 4
MARKING
DIAGRAM
AN M
1
AN = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
BAW56M3T5G
Package
SOT−723
(Pb−Free)
Shipping
8000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
January, 2009
Rev. 0
1
Publication Order Number:
BAW56M3/D
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