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BSZ018NE2LSIATMA1

Description
MOSFET LV POWER MOS
CategoryDiscrete semiconductor    The transistor   
File Size648KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ018NE2LSIATMA1 Overview

MOSFET LV POWER MOS

BSZ018NE2LSIATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, S-PDSO-N3
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)80 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.0025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
For
BSZ018NE2LS
TM
OptiMOS
Features
Power-MOSFET
Product Summary
25
V
GS
=10 V
V
GS
=4.5 V
I
D
1.8
2.4
40
A
V
mW
• Optimized for high performance Buck converter (Server,VGA)
V
DS
• Very Low FOM
QOSS
for High Frequency SMPS
• Low FOM
SW
for High Frequency SMPS
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
R
DS(on),max
PG-TSDSON-8
(fused leads)
Type
BSZ018NE2LS
Package
PG-TSDSON-8 (fused leads)
Marking
018NE2L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=60 K/W
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
1)
2)
Value
40
40
40
40
Unit
A
23
160
20
150
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
W
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev. 2.2
page 1
2013-04-25

BSZ018NE2LSIATMA1 Related Products

BSZ018NE2LSIATMA1 BSZ018NE2LSATMA1
Description MOSFET LV POWER MOS MOSFET LV POWER MOS
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction SMALL OUTLINE, S-PDSO-N3 SMALL OUTLINE, S-PDSO-F3
Contacts 8 8
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 80 mJ 150 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (ID) 22 A 23 A
Maximum drain-source on-resistance 0.0025 Ω 0.0024 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-PDSO-N3 S-PDSO-F3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 160 A 160 A
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form NO LEAD FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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